Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Optical-Response of Free-Carrier Plasma Effects of Mev Arsenic-Ion-Implanted Silicon

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Evolution of secondary defects in arsenic implanted Si

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Effects of Si, Ge and Ar Ion-Implantation on EL from Au/Si-rich SiO2/p-Si Structure

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Enhanced silicon band edge related radiation: Origin and applicability for light emitters

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Spectral study of SiO2 photonic crystal under MeV Au ion irradiation

Compensation Phenomena In Gaas Implanted With 1 Mev Silicon Ions

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation