Modification of Optical Bandgap of Thin Silicon Films Induced by 94 MeV Xe Ion Irradiation
Cheng-shao YANG,Zhi-guang WANG,Jian-rong SUN,Cun-feng YAO,Hang ZANG,Kong-fang WEI,Jie GOU,Yi-zhun MA,Tie-long SHEN,Yan-bin SHENG,Ya-bing ZHU,Li-long PANG,Bing-sheng LI,Hong-hua ZHANG,Yun-chong FU
2010-01-01
Abstract:Mono-crystalline silicon(c-Si),thin films of amorphous silicon(a-Si)and nano-crystalline silicon(nc-Si)were irradiated at room temperature(RT)by using 94 MeV Xe-ions at 1.0×10~(11),1.0×10~(12) or 1.0×10~(13) Xe-ions/cm~2,respectively.All samples were analyzed at RT by an UV/VIS/NIR spectrometer(Lambda 900,PE,Germany),and then the uariation of the optical bandgap with the irradiation fluence was investigated systematically.The results show that the optical bandgap of the silicon samples irradiates by Xe-ion changed dramatically with different crystalline structures.For the a-Si thin films,the optical bandgap values decreased gradually from~1.78 to~1.54 eV with increasing Xe-ion irradiation fluence.For the nc-Si thin films,the optical bandgap values increased sharply from~1.50(origin)to~1.81 eV(Φ=1.0×10~(12)ions/cm~2),and then decreased to~1.67 eV(Φ=1.0×10~(13) ions/cm~2).However,there is no observable change of the optical bandgap of the c-Si after Xe-ion irradiations.Possible mechanism on the modification of the silicon thin films was briefly discussed.