Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

The transformation balance between two types of structural defects in silica glass in ion-irradiation processes

Photosensitive defects in germanium doped silica glass

Generation and Recombination of Defects in Vitreous Silica Induced by Irradiation with a Near-Infrared Femtosecond Laser

Formation and annihilation of point defects in SiO 2 glass during neutron irradiation and annealing

Gamma‐ray irradiation effect on microstructure and physical performances of porous silica

From Phase Separation to Nanocrystallization in Fluorosilicate Glasses: Structural Design of Highly Luminescent Glass-Ceramics

Spectral study of SiO2 photonic crystal under MeV Au ion irradiation

Irradiation-induced toughening of calcium aluminoborosilicate glasses

Propagation mechanism of E'-center and NBOHC in fused silica induced by gamma-ray irradiation

Evolutionary Mechanism of the Defects in the Fluoride-Containing Phosphate Based Glasses Induced by Gamma Radiation.

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Metastable Defects Induced by X-Ray Irradiation in Fe-Doped Soda-Lime Silicate Glass

Role of hydrogen on the generation and decay of point defects in amorphous silica exposed to UV laser radiation

Performance degradation mechanism of γ-ray irradiated sol-gel silica film

X-ray induced nonbridging oxygen hole center in soda-lime silicate glass

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Effects of High-Energy Electron Irradiation on Heavy-Metal Fluoride Glass

The Defects in Amorphous Silica under Infrared Femtosecond Laser Irradiation

Optical Properties and Laser Damage Performance of Sio2 Irradiated by High-Power Pulsed Electron Beam