Abstract:This experimental PhD work deals with the generation and transformation processes of point defects induced by UV laser irradiation on amorphous silicon dioxide (silica). The investigation relies on several spectroscopic techniques used to probe the microscopic damage induced by UV laser on the material. The most innovative approach, however, is the measurement in situ of the absorption signals related to laser-induced point defects. This technique yields new information on the kinetics of defect processes, inaccessible to previous works based only on stationary measurements of laser-induced damage. The main result is to show that a major damage mechanism of silica under 4.7eV laser radiation is the generation of E' centers (silicon dangling bond defects) by photolysis of pre-existing Si-H bonds. This process occurs by two-photon absorption of laser light, and the produced E' centers are unstable in a wide temperature range: in fact, rupture of Si-H produces hydrogen atoms H together with E'; hence, H atoms dimerize in H_2, which diffuses in the glass and reacts back with the E' centers causing their decay. The generation and decay kinetics of laser-induced E' centers are quantitatively modelled by considering the competition between the laser-induced breakage of Si-H and the concurrent reaction between E' and H_2. The latter reaction is studied in detail at several temperatures: some of its features are found to be affected by the disorder of the glass matrix; moreover, its kinetics is found to be activation-limited rather than diffusion-limited, contrary to what is usually found for the reactions of diffusing species with point defects.

Photosensitive defects in germanium doped silica glass

KrF-excimer Laser Irradiation on the Soda-Lime Silicate Glass

Femtosecond Laser Induced Defects in Various Silica Glasses

The Defects in Amorphous Silica under Infrared Femtosecond Laser Irradiation

Uv-Laser Irradiation on the Soda-Lime Silicate Glass

Generation and Recombination of Defects in Vitreous Silica Induced by Irradiation with a Near-Infrared Femtosecond Laser

Laser-induced defects in fused silica by UV laser irradiation

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Compact HI clouds at high forbidden velocities in the inner Galaxy

Role of hydrogen on the generation and decay of point defects in amorphous silica exposed to UV laser radiation

UV–visible Absorption Changes of Lead Silicate Glasses after UV Laser Irradiation

Near-Infrared Femtosecond Laser Induced Defect Formation in High Purity Silica below the Optical Breakdown Threshold

Defect-related Infrared Photoluminescence in Ge+-implanted SiO2 Films

Bulk Damage and Stress Behavior of Fused Silica Irradiated by Nanosecond Laser

Femtosecond Laser Induced Damage on Ge-As-S Chalcogenide Glasses

Use of optically detected magnetic resonance to correlate germanium electron centers with UV absorption bands in X-ray irradiated germanosilicate glasses

An Overview of the Thermal Erasure Mechanisms of Femtosecond Laser‐Induced Nanogratings in Silica Glass

Infrared photosensitivity in silica glasses exposed to femtosecond laser pulses

The transformation balance between two types of structural defects in silica glass in ion-irradiation processes

Correlation Between 193nm Absorption and Photoluminescence-Related Defects for Fused Silica Materials

UV Irradiation-Induced Defect Study Ofgeo2−sio2