Compact HI clouds at high forbidden velocities in the inner Galaxy

J. M. Stil,Felix. J. Lockman,A. R. Taylor,J. M. Dickey,D. W. Kavars,P. G. Martin,T. A. Rothwell,A. Boothroyd,N. M. McClure-Griffiths

DOI: https://doi.org/10.1086/498347

2005-09-24

Abstract:The VLA Galactic Plane Survey (VGPS) of the first Galactic quadrant was searched for HI emission with velocities well above the maximum velocity allowed by Galactic rotation. A sample of 17 small fast-moving clouds was identified. The distribution of the ensemble of clouds in longitude and velocity indicates that the clouds are part of the Galactic disk, despite their large forbidden velocity. The median angular diameter of the clouds detected in the VGPS is 3.4 arcminutes. These clouds would not be noticed in previous low resolution surveys because of strong beam dilution. Assuming each cloud is located at the tangent point, a median cloud has a diameter of 10 pc, HI mass of 60 M_sun, and a velocity more than 25 km/s beyond the local terminal velocity derived from 12CO observations. Three clouds in the sample have a velocity between 50 and 60 km/s in excess of the local terminal velocity. The longitude distribution of the sample peaks near l = 30 degrees, while the latitude distribution of the clouds is nearly flat. The observed longitude and latitude distributions are compared with simulated distributions taking into account the selection criteria of the cloud search. It is found that the number of clouds declines with distance from the Galactic center, with an exponential scale length 2.8 - 8 kpc at the 99% confidence level. We find a lower limit to the scale height of the clouds of 180 pc (HWHM), but the true value is likely significantly higher.

Astrophysics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study the conversion process of germanium (Ge) - related point defects in silicon dioxide (SiO₂) under 4.7 eV ultraviolet laser irradiation, especially the role of hydrogen (H) in this conversion process. Specifically, the paper focuses on:

1. **Interaction between hydrogen and germanium - related defects**:
- The interrelationship between the hydride center (H(II) = Ge•-H) and the two - coordinated germanium defect (=Ge••) was studied.
- H(II) is generated in the post - irradiation stage, while =Ge•• decays during and after irradiation.

2. **Reaction mechanism**:
- A chemical reaction mechanism was proposed to explain the observed phenomena, especially the reaction equations:
\[
\text{=Ge••} + \text{H}_0 \rightarrow \text{=Ge•-H}
\]
and
\[
\equiv\text{Si•} + \text{H}_2 \rightarrow \equiv\text{Si - H} + \text{H}_0
\]

3. **Effect of repeated irradiation**:
- The effect of multiple irradiations on the sample was studied. It was found that each irradiation would destroy the already - formed H(II) centers and restore their precursor =Ge••, resulting in the reproducibility of the post - irradiation kinetics of these species after multiple laser exposures.

4. **Kinetics of diffusion - limited reactions**:
- A set of coupled rate equations was established to describe the irradiation - triggered chemical reactions, and the rationality of these models was verified by experimental data.

In summary, this paper aims to reveal the conversion mechanism of germanium - related defects in silicon dioxide under ultraviolet laser irradiation, especially the key role of hydrogen in this conversion process, and provides a detailed explanation through a combination of experimental and theoretical models.