Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Stability of Ge-related point defects and complexes in Ge-doped SiO_2

Structure of Ge–O complexes in Czochralski silicon

Ge-vacancy Pair in Ge-doped Czochralski Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Defects in Ge-doped Cz-Si Annealed under High Stress

Point Defects in SiGe Alloys: Structural Guessing Based on Electronic Transition Analysis

Stress-dependent Transformation of Interstitial Oxygen in Processed Ge-doped Cz-Si

Compact HI clouds at high forbidden velocities in the inner Galaxy

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Attractive interaction of Indium with point defects and silicon in GeSi

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals

Local Lattice Distortion of Ge Impurity in Si (001): Multiple-Scattering Exafs Study

First principles analysis of impurities in silicon carbide grain boundaries

Structural, electronic and optical properties of tetrahedral $Si_xGe_{47-x}:H_{60}$ nanocrystals: A Density Functional study

Stable and Metastable Configurations of Iron Atoms in SiGe Alloys

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon