Abstract:Magnesium aluminate scandium oxide (ScAlMgO4) is a promising lattice-matched substrate material for GaN- and ZnO-based optoelectronic devices. Yet, despite its clear advantages over substrates commonly used in heteroepitaxial growth, several fundamental properties of ScAlMgO4 remain unsettled. Here, we provide a comprehensive picture of its optical, electronic and structural properties by studying ScAlMgO4 single crystals grown by the Czochralski method. We use variable angle spectroscopic ellipsometry to determine complex in-plane and out-of-plane refractive indices in the range from 193 to 1690 nm. An oscillator-based model provides a phenomenological description of the ellipsometric spectra with excellent agreement over the entire range of wavelengths. For convenience, we supply the reader also with Cauchy formulas describing the real part of the anisotropic refractive index for wavelengths above 400 nm. Ab initio many-body perturbation theory modeling provides information about the electronic structure of ScAlMgO4, and successfully validated experimentally obtained refractive index values. Simulations also show exciton binding energy as large as a few hundred of meV, indicating ScAlMgO4 as a promising material for implementation in low-threshold, deep-UV lasing devices operating at room temperature. X-ray diffraction measurements confirm lattice constants of ScAlMgO4 previously reported, but in addition, reveal that dominant crystallographic planes (001) are mutually inclined by about 0.009°. In view of our work, ScAlMgO4 is a highly transparent, low refractive index, birefringent material similar to a sapphire, but with a much more favorable lattice constant and simpler processing.

Study on Growth and Characterization of ScAlMgO4 Substrate Crystal

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

Study on the Growth of Pure and Ga3+ Doped γ-LiAlO2 Crystals

Study on Large-size γ-LiAlO2 Single Crystal Grown by Czochralski Technique

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Optical, electronic and structural properties of ScAlMgO4

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Growth of Cubic MgxZn1-xO Films and Characterization

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Growth and Characterization of Algan/Gan Superlattices

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Study on the Growth Defects of Γ-Lialo2 Crystal

Crystal characterization of zinc oxide thin film

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN