Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Direct-write fabrication of a nanoscale digital logic element on a single nanowire.

High-Performance Logic Circuits Constructed On Single Cds Nanowires

Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

High Performance Zno Nanorod Strain Driving Transistor Based Complementary Metal-Oxide-Semiconductor Logic Gates

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Selective Operation of Enhancement and Depletion Modes of Nanoscale Field-Effect Transistors

Si-Nanowire Cmos Inverter Logic Fabricated Using Gate-All-Around (gaa) Devices and Top-Down Approach

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Si Nanowire - Array Source Gated Transistors

Fully Gate-All-Around Silicon Nanowire Cmos Devices

3D Logic Cells Design and Results Based on Vertical NWFET Technology Including Tied Compact Model

Vertical Silicon Nanowire CMOS Inverter

Fabrication and Electrical Property of Individual ZnO Nanowire Based Mesfet

Metal-Gated Junctionless Nanowire Transistors

Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion

High-performance, Fully Transparent, and Flexible Zinc-Doped Indium Oxide Nanowire Transistors

High-Performance Zno Nanowire Field-Effect Transistor With Forming Gas Treated Sio2 Gate Dielectrics