Abstract:Boltzmann distribution thermal tails of carriers restrain the subthreshold swing (SS) of field-effect transistors (FETs) to be lower than 60 mV/decade at room temperature, which restrains the reduction of operate-voltage and power consumption of transistors. The negative-capacitance FET (NC FET) is expected to break through this physical limit and obtain a steep SS by amplifying the gate voltage through the negative capacitance effect of the ferroelectric thin film, providing a new way to further reduce the power consumption of the transistor at the end of Moore's law. Here, we show a MoS2 NC FET with a CuInP2S6 ferroelectric, exhibiting a large on/off ratio of 108, a steep SS as low as 6 mV/decade, and a wide sub-60 mV/decade drain current range of more than 4 orders of magnitude while sacrificially inducing a huge hysteresis larger than 500 mV. Furthermore, we found that by inserting the h-phase boron nitride (h-BN) layer with suitable thickness, the dielectric capacitance matches the ferroelectric negative capacitance better, and thus the hysteresis on the transfer curve is reduced, and the ideal switching-behavior transistors with SS as low as 62 mV/decade and only 5 mV negligible hysteresis were obtained. Our work demonstrates that under the capacitance-matching condition, the hysteresis-free negative-capacitance transistors do not act as the predicted steep-slope transistors, but their voltage-saving still occurs instead as a type of effective transconductance booster with more than 20 times transconductance amplification.

In2O3 Nanowire Field-Effect Transistors with Sub-60 Mv/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications.

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors

An All Two-Dimensional Vertical Heterostructure Graphene/cuinp2s6/mos2 for Negative Capacitance Field Effect Transistor

Van der Waals negative capacitance transistors

Design of Negative Capacitance Tunneling Field Effect Transistor with Dual-Source U-shape Channel, Super-Steep Subthreshold Swing and Large On-State Current

Negative-Capacitance FET With a Cold Source

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Strain Tuning on Van Der Waals Negative Capacitance Transistors

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Sub-60 Mv Per Decade Switching in Ion-Gel-gated In-Sn-O Transistors with a Nano-Thick Charge Trapping Layer.

Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors