Abstract:Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two- and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope’s vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on–off current ratio of ∼101, a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm2/(V·s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10–2 Ω·cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

Fabrication and Electrical Property of Individual ZnO Nanowire Based Mesfet

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

Fabrication and I-V Characteristics of Zno Nanowire-Based Field Effect Transistors

Photoelectric Characteristics of Single ZnO Nanowire Field Effect Transistor

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Fabrication and Characterization of Gated ZnO Nanowire Field Electron Emitters

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

The Research on Suspended Zno Nanowire Field-Effect Transistor

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

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Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Back-gate ZnO Nanowire Field-Effect Transistors Each with a Top Ω Shaped Au Contact

Electrical and Optical Properties of Single As-Doped Zno Nanowire Field Effect Transistors

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

P − Zn 3 P 2 Single Nanowire Metal-Semiconductor Field-Effect Transistors

Fabrication of ZnO Thin-Film Transistors by L-MBE*

Intrinsic Characteristics of Semiconducting Oxide Nanobelt Field-Effect Transistors

Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor

Synthesis and electrical properties of ZnO nanowires.