Abstract:As one of potential photoelectric material, zinc oxide attracted a lot of attentions recently. Such as, its wide band gap (3.37 eV) and high excitonic binding energy of 60 meV make ZnO as a good candidate for developing short wavelength optical devices. Furthermore, the p-doping ZnO can be produced and the p-n structure of ZnO can be formed on the silicon substrate, both of characteristics make ZnO to be compatible with Si-based integrated circuits. Hence, ZnO film has wider application in opto-electronic industries.ZnO films can be easily prepared by reactive sputtering. techniques However, the surface state which caused by damages of bulk silicon surface and lattice mismatch impurity which contaminated in fabrication procedure can produce the level of surface state and deep level in heterojunction. Those levels affect the carries a lot.Generally the level formed by defects can reduce illuminant efficiency, producing non-radiation recombined, but deep level can also become efficient illuminant centre using wide band gap materials. So it is deserved to study deeply of the behavior of ZnO/p-Si heterojunction interface state. The high frequency C-V character can be used to measure the charge of space charge region varied with the voltage variation, this effect of capacitance can be described by differential capacitance. The C-V measurement supplied an important way to research the characteristics of heterojunction. With the help of the measuring C-V and I-V character, we can easily obtain the evidence that interface impurity state and defects in ZnO ∶Al/p-Si interface can have largely influence on electricity property of the heterojunction. We also found it was very useful to reduce the interface state (using) annealing procedure. It was clearly to see that the sample annealed in 800 ℃ had the larger illuminant efficiency.Whether annealed or not, the sample grown by RF sputtering technique can form an abrupt heterojunction, but the character of potential was not the same. As a large number of deep level and surface state level were in interfaces, the C-V curve of sample which was not annealed was aberrance and the I-V curve was exponential with reversing bias voltage. In condition of annealing under 800 ℃, we can observe the influence of interface state was eliminated, and improved rectifying characteristic of heterojunction.

Temperature Coefficients Of Grain Boundary Resistance Variations In A Zno/P-Si Heterojunction

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Junction Properties of Nitrogen-Doped Zno Thin Films

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction

Contact Characteristics of ZnO :Al/p-Si

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

Temperature Dependent Transport and Photoresponse Properties of A Mn-Doped Zno/P-Si Heterojunction

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

The Carrier Transport Mechanism and Band Offset at the Interface of ZnO/n-Si(111) Heterojunction

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO

Comparisons and analyses on heterostructures consisting of ZnO and different ferroelectric films

Temperature Dependence of the Piezotronic Effect in ZnO Nanowires.

Rectifying and photovoltage properties of ZnO:Al/p-Si heterojunction

Temperature dependency of impedance, dielectric, and conductivity properties for Si- p /beta-FeSi 2 - n heterostructures created through facing target sputtering

Electrical Characterization of Zno-Based Homojunctions

Grain Boundary Scattering of Charge Transport in n‐Type (Hf,Zr)CoSb Half‐Heusler Thermoelectric Materials