Abstract:High thermoelectric figure of merit zT of ≈1.0 has been reported in both n‐ and p‐type (Hf,Zr)CoSb‐based half‐Heusler compounds, and further improvement of thermoelectric performance relies on the insightful understanding of electron and phonon transport mechanisms. In this work, the thermoelectric transport features are analyzed for (Hf0.3Zr0.7)1−xNbxCoSb (x = 0.02–0.3) with a wide range of carrier concentration. It is found that, although both temperature and energy dependencies of charge transport resemble ionized impurity scattering, the grain boundary scattering is the dominant scattering mechanism near room temperature. With increasing carrier concentration and grain size, the influence of the grain boundary scattering on electron transport weakens. The dominant scattering mechanism changes from grain boundary scattering to acoustic phonon scattering as temperature rises. The lattice thermal conductivity decreases with increasing Nb doping content due to the increased strain field fluctuations. These results provide an in‐depth understanding of the transport mechanisms and guidance for further optimizing thermoelectric properties of half‐Heusler alloys and other thermoelectric systems. The abnormal electrical conductivity increase near room temperature in (Hf0.3Zr0.7)1−xNbxCoSb is ascribed to the grain boundary scattering rather than the generally suggested ionized impurity scattering. By increasing the grain size to suppress the grain boundary scattering, the power factor can be increased. An in‐depth understanding of the transport mechanisms provides guidance for further optimizing thermoelectric properties.

Low interfacial resistivity in CoSi<sub> 2</sub>/ZrCoSb thermoelectric junctions

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

Mo-Fe/NbFeSb Thermoelectric Junctions: Anti-Thermal Aging Interface and Low Contact Resistivity

Low Contact Resistivity and Long-Term Thermal Stability of Nb0.8Ti0.2FeSb/Ti Thermoelectric Junction

Low Contact Resistivity and Interfacial Behavior of P-Type NbFeSb/Mo Thermoelectric Junction.

Improved Thermoelectric Performance of N-Type Half-Heusler MCo1-xNixSb (M = Hf, Zr)

Transport Mechanisms and Property Optimization of P-Type (zr, Hf) CoSb Half-Heusler Thermoelectric Materials

Low contact resistivity and excellent thermal stability of p‐type YbMg0.8Zn1.2Sb2/Fe‐Sb junction for thermoelectric applications

Enhanced Interfacial Reliability and Mechanical Strength of CoSb3-Based Thermoelectric Joints with Rationally Designed Diffusion Barrier Materials of Ti-Based Alloys

Multiscale Phonon Scattering for Ultra‐Low Thermal Conductivity in Co‐Doped ZrCoBi Half‐Heusler

Grain Boundary Scattering of Charge Transport in n‐Type (Hf,Zr)CoSb Half‐Heusler Thermoelectric Materials

High thermoelectric properties of P-SiGe/Sr0.9La0.1Ti0.9-xZrxNb0.1O3 composite

Enhancing Interfacial Stability and Mechanical Strength of a CoSb3-Based Thermoelectric Junction Using Ti-Based Alloy Barrier Layers.

Research on the Thermal Stability of MoCu/CoSb3 Thermoelectric Junction with CoCrFeNi High-Entropy Alloy Barrier Layer

Half-Heusler compounds for thermoelectric energy conversion

n-Type TaCoSn-Based Half-Heuslers as Promising Thermoelectric Materials

Interfacial Stability in Bi2Te3 Thermoelectric Joints

Interfacial Reactions at the Joints of Cosb3-Based Thermoelectric Devices

Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films

Improving the thermoelectric performance of double half-Heusler compounds ZrNi(In,Sb)

Enhanced Thermoelectric Performance in Hf-Free p-Type (Ti, Zr)CoSb Half-Heusler Alloys