Transport Mechanisms and Property Optimization of P-Type (zr, Hf) CoSb Half-Heusler Thermoelectric Materials

C. Hu,K. Xia,X. Chen,X. Zhao,T. Zhu
DOI: https://doi.org/10.1016/j.mtphys.2018.11.002
IF: 11.021
2018-01-01
Materials Today Physics
Abstract:Owing to the diverse sample quality as a result of different synthesis methods, previous studies on p-type MCoSb (M = Zr, Hf, Ti)-based half-Heusler thermoelectric (TE) compounds yield inconsistent results. It is thus necessary to verify the optimized carrier concentration and understand the transport mechanisms for this system based on high-purity samples, which can provide the guidance of further improving its TE properties and reasonably assess the application potential. In this work, high-purity Zra(0.5)Hf(0)(.5)CoSb(1-x)Sn(x)(x = 0.05-0.30) and Zr1-yHfyCoSb0.8Sn0.2 (y = 0-1.0) are synthesized to understand the intrinsic electrical and thermal transport features. The optimized carrier concentration is found to be about 2.2 x 10(21)m(-3) with the Sn doping level x = 0.2. A high power factor more than 3x10(-3)Wm(-1)K(-2) at 800 K is achieved for Zr0.5Hf0.5CoSb0.8Sn0.2. Moreover, our results indicate that it is necessary to combine alloying at the M site and grain refinement to achieve a low lattice thermal conductivity. A relatively high zT similar to 0.93 at 1123 K is obtained for the Zr0.5Hf0.5CoSb0.8Sn0.2 sample. This work provides useful insight into the charge carrier and phonon transport mechanisms and confirms the TE application potential of this system. (C) 2018 Elsevier Ltd. All rights reserved.
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