A new transparent conductive thin film In2O3:Mo

Yang Meng,Xi-liang Yang,Hua-xian Chen,Jie Shen,Yi-ming Jiang,Zhuang-jian Zhang,Zhong-yi Hua
DOI: https://doi.org/10.1016/S0040-6090(01)01142-7
IF: 2.1
2001-01-01
Thin Solid Films
Abstract:A new high quality transparent conductive thin film In2O3:Mo (IMO) was prepared by conventional thermal reactive evaporation at the substrate temperature of approximately 350°C. From X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis of IMO films, it was confirmed that Mo6+ substituted In3+ without changing the cubic bixbyite structure of In2O3 and there were no new compounds in IMO as well. One atom of dopant contributes with more electrons to the electrical conductivity and at the same carrier concentration there is fewer dopant in IMO than in other doped oxides. So, the IMO film exhibits simultaneously higher values of Hall mobility, electric conductivity, visible light transmittance, infrared reflectance and plasma wavelength. An electrical resistivity as low as 1.7×10−4 Ω cm was obtained, while the infrared reflectance above 4 μm and the average total visible light transmittance of the IMO film plus the glass substrate were both over 80%, and the plasma wavelength was at approximately 2.2 μm. IMO is more suitable for the energy efficient windows used in cold climates or even for optoelectronic device applications.
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