Properties of Transparent Conductive In2o3 : Mo Thin Films Deposited by Channel Spark Ablation
L Huang,Xf Li,Q Zhang,Wn Miao,L Zhang,Xj Yan,Zj Zhang,Zy Hua
DOI: https://doi.org/10.1116/1.1991871
2005-01-01
Abstract:Molybdenum-doped indium oxide In2O3:Mo (IMO) thin films were deposited on glass substrates by a technique called channel spark ablation. The structure, surface morphology, electrical, and optical properties of these films were investigated by x-ray diffraction, atomic force microscopy (AFM), four-point probe, ultraviolet photoelectron spectroscopy (UPS), Hall analysis, and spectrophotometry. The influence of oxygen pressure on the electrical properties of IMO thin films prepared at Ts=350°C was studied, showing that increasing oxygen pressure changes the resistivity concavely and the carrier concentration convexly. The IMO films as deposited are well crystallized with a preferred orientation of (222) and the surface roughness evaluated in terms of Rrms, Ra, and Rp-v measured by AFM is 0.72, 0.44, and 15.4 nm, respectively. The lowest resistivity and corresponding carrier concentration are 4.8×10−4Ωcm and 7.1×1020cm−3. The typical work function of IMO is 4.6 eV measured by UPS. For all the samples, the average transmittance in the visible region is more than 87%.