Multi-Functional Molybdenum Oxide Doping to Improve the Electrical Characteristics of Indium Oxide Thin Film Transistors
Kwan-Jun Heo,Jae-Yun Lee,Gergely Tarsoly,Sung-Jin Kim
DOI: https://doi.org/10.1007/s13391-024-00522-y
IF: 3.151
2024-09-25
Electronic Materials Letters
Abstract:This study investigates the utilization of MoO 3 precursors to enhance the electrical properties and stability of In 2 O 3 TFTs based on eco-friendly aqueous solutions. Specifically, MoO 3 doped In 2 O 3 (Mo-In 2 O 3 ) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO 3 precursor provide free electrons to the In 2 O 3 thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In 2 O 3 TFT due to MoO 3 doping, measurements of electron mobility after 30 days confirmed that In 2 O 3 TFT electron mobility decreased by more than 80%, whereas Mo-In 2 O 3 TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In 2 O 3 TFT was less than that of In 2 O 3 TFT. (In 2 O 3 TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In 2 O 3 TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In 2 O 3 film according to MoO 3 Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In 2 O 3 TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various V DD conditions. Graphical Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors
materials science, multidisciplinary