Abstract:The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. We report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 O 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

Fluorinated aminoalkoxide and ketoiminate indium complexes as MOCVD precursors for In2O3 thin film deposition

Crystal transformation synthesis of a highly stable fluorescent 3D indium-tetranuclear {In4(μ2-OH)3} building block based metal organic framework through a dinuclear complex.

Characterization of prepared In2O3 thin films: The FT-IR, FT-Raman, UV-Visible investigation and optical analysis

Wide process temperature of atomic layer deposition for In 2 O 3 thin-film transistors using novel indium precursor (N,N'-di-tert butylacetimidamido)dimethyllindium)

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Fabrication and performance of indium oxide based transparent thin film transistors

Tailoring indium oxide film characteristics through oxygen reactants in atomic layer deposition with highly reactive liquid precursor

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Mo-doped indium oxide films by dip-coating: Synthesis, microstructure and optical properties

Tris(2-hydroxyethyl(Methyl)amino-dithiocarbamato)Indium(III): Structural Characterization, Optical Properties, and Thermal Stability Study for Optoelectronic Application

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

One-Step Synthesis of Nearly Monodisperse, Variable-Shaped In<sub>2</sub>O<sub>3</sub>Nanocrystals in Long Chain Alcohol Solutions

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Synthesis And Characterization Of Dialkylaluminum, -Gallium Or -Indium[2(2-Pyridyl)]Ethoxides - Crystal Structure Of [Me2in{Mu-O-Ch2ch2 (2-C5h4n)}](2)

Indium Hydroxide and Indium Oxide Nanospheres, Nanoflowers, Microcubes, and Nanorods: Synthesis and Optical Properties

New Series Of Indium Formates: Hydrothermal Synthesis, Structure And Coordination Modes

Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications