Abstract:The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. We report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 O 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Electrodeposition of indium antimonide (InSb) from dimethyl sulfoxide-based electrolytes

Synthesis of photoresponsive and photoemissive ultrathin 2D nanosheets of In2S3 achieved through a new single source molecular precursor

Preparation of ZnIn_2S_4 Thin Film by Spray Pyrolysis and Its Photoelectrochemical Characteristic

Preparation of Indium Hydroxy Sulfide In x ( OH ) y S z Thin Films by Chemical Bath Deposition

Photo-sensing properties of Cd-doped In2S3 thin films fabricated via low-cost nebulizer spray pyrolysis technique

Hydrothermal Synthesis and Photoelectrochemical Properties of In2S3 Thin Films with a Wedgelike Structure

Microwave-Assisted Synthesis of Bi2S3 and Sb2S3 Nanoparticles and Their Photoelectrochemical Properties

Dramatic Enhancement in Photoresponse of β-In2S3 through Suppression of Dark Conductivity by Synthetic Control of Defect-Induced Carrier Compensation

Interfacial Engineering of In2O3/In2S3 Heterojunction Photoanodes for Photoelectrochemical Water Oxidation

Studies on the photochemical deposition (PCD) of II–VI compound semiconductor thin films of ZnS from aqueous solution

Optimizing Photovoltaic Efficiency Through Di-Indium Tri-Selenide Thin Film Solar Cells

SOLVOTHERMAL PROCESSES TO INDIUM SELENIDE PRECURSORS AND THEIR CONVERSION TO PHASE-PURE POLYCRYSTALLINE In2Se3

The low temperature pyrolysis preparation of In2S3 thin film and its application in Sb2S3 thin film solar cells

Synthesis and Characterization of Uncracked IrO2‒SnO2‒Sb2O3 Oxide Films Using Organic Precursors and Their Application for the Oxidation of Tartrazine and Dibenzothiophene

Preparation and characterization of Sb2Se3 thin films by electrodeposition and annealing treatment

[(Ph 3 P) 2 Ag(μ-SeCH 2 Ph) 2 In(SeCH 2 Ph) 2 ]: A New Heterobimetallic Single Source Precursor As a Springboard to Bulk, Nano and Thin Film of Ternary AgInSe 2 Material

PHOTOTHERMAL DEFLECTION ANALYSIS OF [math]-In2S3 THIN FILMS: THE EFFECT OF S/In MOLAR RATIOS

Tin Lodide Thin Films Growth via Plasma Enhanced Chemical Vapor Deposition and its Optimization Using V–I Probe Impedance Analyser for Optoelectronic Applications

Structural, optical and photoelectrochemical behavior of facile electrodeposition of organic/inorganic hybrid film