Abstract:Indium antimonide (InSb) is a III-V compound semiconductor with a narrow bandgap and a high electron mobility, and is used in various optoelectronic devices. Electrodeposition represents a low-cost, scalable method for fabricating InSb films. In the literature, aqueous electrolytes and ionic liquids have commonly been applied. In this work, the electrodeposition of InSb films and nanowires from a dimethyl sulfoxide (DMSO)-based electrolyte was demonstrated. This electrolyte enabled electrodeposition in a broader potential range and at higher temperatures as compared to aqueous electrolytes. The electrolyte has a lower viscosity than ionic liquids, therefore exhibiting better mass transport properties for electrodeposition. It was shown that antimony(III) chloride, a precursor that is commonly used for InSb electrodeposition, leads to the formation of the metastable "explosive" antimony allotrope. Instead, self-prepared antimony(III) nitrate and indium(III) methanesulfonate were used, and were proven to be suitable precursors. Electrolytes with a 5:1 indium-to-antimony precursor molar ratio enabled electrodeposition of InSb films at 21 °C and 120 °C on platinum and n-type InSb(400), as well as electrodeposition of InSb nanowires in anodized aluminum oxide templates. The morphology, elemental composition and crystallinity of as-deposited InSb was analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD), respectively. It was demonstrated that the film quality did not improve at 120 °C. Tauc plots from FT-IR transmission measurements were used for the determination of the bandgap of the deposits. The bandgap of the InSb films on platinum was 0.159 eV at 21 °C and 0.168 eV at 120 °C, whereas the bandgap of the InSb film deposited at 120 °C on InSb(400) was 0.186 eV.

What problem does this paper attempt to address?

The paper aims to address the issue of electrodeposition of indium antimonide (InSb) thin films and nanowires. InSb is a narrow bandgap, high electron mobility III-V compound semiconductor, widely used in various optoelectronic devices. However, traditional preparation methods such as chemical vapor deposition, although capable of providing high-quality single-crystal materials, are expensive, require toxic precursors, and have slow deposition rates. The paper explores the method of InSb electrodeposition using a dimethyl sulfoxide (DMSO)-based electrolyte. Compared to aqueous electrolytes, this electrolyte can operate over a wider potential range and allows deposition at higher temperatures; compared to ionic liquids, it has lower viscosity, which is beneficial for mass transfer. The study found that the commonly used antimony trichloride as a precursor leads to unstable and potentially hazardous antimony allotrope formation. Therefore, the researchers chose self-made antimony trinitrate and indium methanesulfonate as precursors, successfully achieving the electrodeposition of InSb thin films and nanowires. Experimental results show that a 5:1 molar ratio of indium to antimony precursors can achieve the electrodeposition of InSb thin films on platinum and n-type InSb(400) substrates at 21°C and 120°C, as well as the electrodeposition of InSb nanowires in anodic aluminum oxide templates. The morphology, elemental composition, and crystallinity of the deposits were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD). The results indicate that the film quality at 120°C is not significantly better than at 21°C, but the films deposited on n-type InSb substrates did not exhibit cracks, attributed to the consistency in thermal expansion coefficients and good lattice matching between the substrate and the deposit. In summary, the paper proposes a new method for InSb electrodeposition, addressing the issues present in traditional methods and demonstrating the application effects of this method at different temperatures.

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