Abstract:The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. We report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 O 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

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Preparation of Indium Hydroxy Sulfide In x ( OH ) y S z Thin Films by Chemical Bath Deposition

Fabrication and characterization of CuInS 2 films by chemical bath deposition in acid conditions

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Transport properties of indium sulfide thin films deposited by chemical bath deposition

Room Temperature Electrodeposition of Oriented Agi Crystals

Electrodeposition of indium antimonide (InSb) from dimethyl sulfoxide-based electrolytes

Optical and Structural Properties of Indium Sulfide Thin Film Produced by CBD Method

Preparation of AgInS2 thin film by electrodeposition method

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Electrodeposition of silver selenide thin films from aqueous solutions

Studies on Synthesis and Characterization of a Chemically Deposited Nanostructured Thin Film of Ternary Compound Silver Bismuth Sulfide (AgBi2S3) onto n-Type Wide Band Gap Semiconducting Titanium Dioxide (TiO2)

Preparation of CuInSe 2 Film with Electrodeposition

Tailoring the structural, optical, and optoelectrical properties of innovative n-type Ag2ZnSnS4 thin films and investigating ITO/Ag2ZnSnS4/SnS/Au heterojunction

Shape- and Phase-Controlled Synthesis of Monodisperse, Single-Crystalline Ternary Chalcogenide Colloids Through A Convenient Solution Synthesis Strategy

In situ fabrication of AgI films on various substrates

Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Synthesis and characterization of AgI thin films at low temperature

Effect of annealing on structural and optical properties of indium sulfide thin layers produced by chemical bath deposition method

Electrodeposition of Silver Telluride Thin Films from Non-Aqueous Baths