Abstract:Two-dimensional layered semiconductors have been the research focus of electronics and optoelectronics owing to their atomic thickness, light-matter interaction, and large-scale integration. Metal phosphorus trichalcogenides (MPTs), possessing the structure of [P2S6]4– or [P2Se6]4– surrounded with metal cations, have emerged as newly rising stars and drawn widespread interests of researchers due to their novel electrical and optical properties. Compared with common transition metal dichalcogenides, two-dimensional (2D) MPTs have larger optical bandgaps (from 1.3 to 3.5 eV), higher light absorption efficiency and richer bandgap structures due to the increased degree of freedom from the elements and atomic ratio, which highlight its great advantages in the field of optoelectronics. Among MPTs, In2/3PSe3 owns special structure, in which two-thirds of the octahedral holes are occupied by the indium ions and the other one-third are vacant. The unique structure endows In2/3PSe3 with intrinsic broken-symmetry, showing potential in non-linear optics. It was reported that bulk In2/3PSe3 is a direct-bandgap semiconductor (2.0 eV), in which the electron transition process from the conduction band to valence band is direct without phonon assisting, indicating great potential in application of optoelectronic devices. However, there is no research reported on the optoelectronic property of In2/3PSe3. According to the promising properties mentioned above, it is extremely urgent to characterize the optical and optoelectronic properties of 2D In2/3PSe3 nanosheets. In this work, high-quality In2/3PSe3 single crystals are synthesized by chemical vapor transport method and for the first time we achieve 2D In2/3PSe3 nanosheets on SiO2/Si substrate by mechanical exfoliation. X-ray diffractometer (XRD) and transmission electron microscope (TEM) are performed on In2/3PSe3 nanosheets, which demonstrate their high quality and single-crystalline nature. Considering that the non-centrosymmetric space group R 3, we further explored the SHG properties of In2/3PSe3 nanosheets. The intrinsic SHG response further verifies the broken-symmetry nature of In2/3PSe3. In addition, photoluminescence spectra of In2/3PSe3 nanosheets have revealed the exciton-like transition mechanism and longer PL lifetime than previously reported 2D materials, which may own to the high crystalline and low defects of as-synthesized crystals. To investigate the optoelectronic behavior of 2D In2/3PSe3 nanosheets, two-electrodes photodetectors based on In2/3PSe3 nanosheets are fabricated. Impressively, the In2/3PSe3 nanosheets-based photodetector exhibits an ultra-low dark current (25 fA), excellent detectivity (6.28 ´ 1011 Jones), high on/off ratio (4 ´ 104), and ultra-fast response rate (14 μs/24 μs) under 365 nm illumination, which are superior to other typical 2D ultraviolet photodetectors. The main photocurrent generation mechanism of the photodetector is photoconductive effect. The photogenerated free electrons and holes are separated rapidly to the opposite electrodes without trapping in defect states, leading to the ultra-fast response. These excellent optoelectronic behaviors of In2/3PSe3 nanosheet suggest its appealing prospect in future application of photodetection.

Synthesis of photoresponsive and photoemissive ultrathin 2D nanosheets of In2S3 achieved through a new single source molecular precursor

In Situ Synthesis of Metal Sulfide Nanoparticles Based on 2D Metal-Organic Framework Nanosheets.

Controlled growth of vertically aligned ultrathin In 2 S 3 nanosheet arrays for photoelectrochemical water splitting.

Solution-processed In2S3 nanosheet arrays for CuInS2 thin film solar cells

Tailored Indium Sulfide-Based Materials for Solar-Energy Conversion and Utilization

Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

Development of SnS/In2S3 core-shell nanoparticles for solar cell application

Synthesis and Characterization of In2s3 Nanocrystalline Material for Photovoltaic Application

[(Ph 3 P) 2 Ag(μ-SeCH 2 Ph) 2 In(SeCH 2 Ph) 2 ]: A New Heterobimetallic Single Source Precursor As a Springboard to Bulk, Nano and Thin Film of Ternary AgInSe 2 Material

Preparation and Photodetection Performance Oftwo-Dimensional In&lt;sub&gt;2/3&lt;/sub&gt;PSe&lt;sub&gt;3&lt;/sub&gt; Nanosheets

Thiol-Free Synthesis of Bright Near-Infrared-Emitting Ag 2 S Nanocrystals through Heterovalent-Metal Decoration for Ecofriendly Solar Cells

Preparation of In2S3 and Cu-Doped In2S3 2D Ultrathin Nanoflakes with Tunable Absorption and Intense Photocurrent Response

Thiol-Free Synthesis of Bright Near-Infrared-Emitting Ag2S Nanocrystals Through Heterovalent-Metal Decoration for Ecofriendly Solar Cells

Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications

Layered Crystalline ZnIn2S4nanosheets: CVD Synthesis and Photo-Electrochemical Properties

In4SnS8 ultrathin nanosheets: a ternary sulfide with fast adsorption–visible-light photocatalysis dual function

Ultrathin FeSe2 Nanosheets: Controlled Synthesis and Application As a Heterogeneous Catalyst in Dye-Sensitized Solar Cells.

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

In Situ Grown Vertically Oriented CuInS2 Nanosheets and Their High Catalytic Activity As Counter Electrodes in Dye-Sensitized Solar Cells.

Microwave-Assisted Synthesis of Bi2S3 and Sb2S3 Nanoparticles and Their Photoelectrochemical Properties

Adsorption-Driven Catalytic and Photocatalytic Activity of Phase Tuned In2S3 Nanocrystals Synthesized via Ionic Liquids