Abstract:The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. We report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 O 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

Dramatic Enhancement in Photoresponse of β-In2S3 through Suppression of Dark Conductivity by Synthetic Control of Defect-Induced Carrier Compensation

Enhanced Photoresponse of Indium-Doped Tin Disulfide Nanosheets.

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Synthesis of photoresponsive and photoemissive ultrathin 2D nanosheets of In2S3 achieved through a new single source molecular precursor

Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications

Preparation of In2S3 and Cu-Doped In2S3 2D Ultrathin Nanoflakes with Tunable Absorption and Intense Photocurrent Response

Large-area optoelectronic-grade InSe thin films via controlled phase evolution

Effect of different dopants on the structural and physical properties of In2S3 thin films: a review

Substrate-induced phase control of In2Se3 thin films

Interfacial charge regulation of β-In2S3 photoanode via Tm3+ doping toward enhanced photoelectrochemical performance

Ultrasensitive Visible Light Photoresponse and Electrical Transportation Properties of Nonstoichiometric Indium Oxide Nanowire Arrays by Electrospinning

Facile preparation of In2O3‐In2S3 core‐shell composites for enhanced photoelectric activity

Hydrothermal Synthesis of Cu2S Nanocrystalline Thin Film on Indium Tin Oxide Substrate: Morphology, Optical and Electrical Properties

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

Enhanced Photoresponse of High Crystalline Bi2Se3 Thin-Films Using Patterned Substrates

Preparation and Luminescence of Nano-Sized In2O3and Rare-Earth Co-Doped SiO2thin Films

General Synthesis of Metal Indium Sulfide Atomic Layers for Photocatalysis

Photo-sensing properties of Cd-doped In2S3 thin films fabricated via low-cost nebulizer spray pyrolysis technique

Tailored Indium Sulfide-Based Materials for Solar-Energy Conversion and Utilization

Structural and Electronic Response of Multigap N-Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices