Interfacial charge regulation of β-In2S3 photoanode via Tm3+ doping toward enhanced photoelectrochemical performance

Qiujie Li,Jiawei Wang,Yufei Cheng,Xinyang Liu,Qian Sun,Hui Miao,Xiaoyun Hu

DOI: https://doi.org/10.1016/j.optmat.2022.112974

IF: 3.754

2022-11-01

Optical Materials

Abstract:The photoelectrochemical properties of the β-In2S3 are seriously restricted by the severe electron-hole pairs recombination. Introducing foreign ions is a powerful means to regulate the properties of β-In2S3, because of its special defect spinel structure. There are few reports that rare earth ion doped β-In2S3 nanosheets improve their photoelectrochemical properties. Herein, a novel nanostructure photoanode was fabricated using Tm3+ doped β-In2S3 by one-pot in situ hydrothermal method. The photoelectrochemical performance has the highest enhancement when the mole ratio of Tm3+ is 1%. The experimental results indicate that the carrier separation and injection efficiency of β-In2S3 after Tm3+ doping are increased to 8.34% and 76.11%, respectively. The introduction of Tm3+ in the β-In2S3 may yield plenty of shallow electron capture levels below conduction band minimum, which can capture photogenerated electrons to promote the separation of electron-hole pair and improve the photoelectrochemical properties of In2S3. This work sheds light on the rare earth ions doped semiconductor photoanode for photoelectrochemical application.

materials science, multidisciplinary,optics