Epitaxial growth strategy for construction of Tm 3+ doped and [hk1] oriented Sb 2 S 3 nanorods S-scheme heterojunction with enhanced photoelectrochemical performance

Xinyang Liu,Liyuan Zhang,Wei Jin,Qiujie Li,Qian Sun,Yishan Wang,Enzhou Liu,Xiaoyun Hu,Hui Miao
DOI: https://doi.org/10.1016/j.cej.2023.146315
IF: 15.1
2023-10-06
Chemical Engineering Journal
Abstract:With the advantages of high absorption coefficient, non-toxicity and low cost, Sb 2 S 3 shows great potential as a narrow bandgap photocathode in the field of PEC hydrogen production. However, the separation and transportation of photogenerated carriers in the reported Sb 2 S 3 photocathode are inefficient due to its anisotropy and the Fermi level being pinned by deep-level defects. Therefore, Tm 3+ doped Sb 2 S 3 nanorods with the selective carrier transport orientation were epitaxially grown on SnSe 2 film by a simple hydrothermal strategy to modulate the defect property of Sb 2 S 3 , optimize carrier transportation and separation efficiency, and improve the PEC performance of photoelectrodes. Experimental results showed that the doping of Tm 3+ weakening the Fermi level pinning while achieving the conversion of Sb 2 S 3 to n-type conducting property. The S-scheme heterojunction formed by Tm 3+ doped Sb 2 S 3 nanorods labeled as Sb 2 S 3 : Tm 3+ and SnSe 2 nanosheets provided a stronger driving force to optimize carrier interface transportation. The photocurrent density (−0.91 mA cm −2 ) is increased about 18 times compared to the pristine Sb 2 S 3 photocathode. This work developed an effective doping strategy to weaken the Fermi level pinning and provided a novel idea for the epitaxial growth of Sb 2 S 3 nanorods to optimize the carrier transportation.
engineering, chemical, environmental
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