Abstract:Compared with too low or too high Se vapor pressures, moderate Se vapor pressure efficient suppress the formation of deep‐level VSe (selenium vacancy), as well as promote grain growth and form better heterojunction band alignment, resulting in efficient charge separation and transport. As a result, the photoelectrochemical water splitting performance of Sb2Se3 photocathode is significantly improved. Sb2Se3 emerges as a promising material for solar energy conversion devices. Unfortunately, the common deep‐level defect VSe (selenium vacancy) in Sb2Se3 results in a low solar conversion efficiency. The post selenization process has been widely adopted for suppressing VSe. However, the effect of selenization on suppressing VSe is often compromised and even more VSe are induced due to defect‐correlation. Herein, high‐quality Sb2Se3 films are prepared using an unconventional selenization process, with precisely regulating in situ annealing Se vapor pressure. It is found that moderate Se vapor pressure annealing can efficiently suppress VSe by overcoming defect‐correlation, as well as promotes grain growth and forms a better heterojunction band alignment. Consequently, the Sb2Se3 photocathode shows a high‐level photocurrent of 19.5 mA cm−2 at 0 VRHE, an onset potential of 0.40 VRHE and a half‐cell solar‐to‐hydrogen conversion efficiency of 1.9%, owing to the inhibited charge recombination, excellent charge transport and interface charge extraction. This work provides a significant insight to suppress deep‐level defect VSe by adjusting Se vapor pressure for efficient Sb2Se3 photocathode.

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