Abstract:Compared with too low or too high Se vapor pressures, moderate Se vapor pressure efficient suppress the formation of deep‐level VSe (selenium vacancy), as well as promote grain growth and form better heterojunction band alignment, resulting in efficient charge separation and transport. As a result, the photoelectrochemical water splitting performance of Sb2Se3 photocathode is significantly improved. Sb2Se3 emerges as a promising material for solar energy conversion devices. Unfortunately, the common deep‐level defect VSe (selenium vacancy) in Sb2Se3 results in a low solar conversion efficiency. The post selenization process has been widely adopted for suppressing VSe. However, the effect of selenization on suppressing VSe is often compromised and even more VSe are induced due to defect‐correlation. Herein, high‐quality Sb2Se3 films are prepared using an unconventional selenization process, with precisely regulating in situ annealing Se vapor pressure. It is found that moderate Se vapor pressure annealing can efficiently suppress VSe by overcoming defect‐correlation, as well as promotes grain growth and forms a better heterojunction band alignment. Consequently, the Sb2Se3 photocathode shows a high‐level photocurrent of 19.5 mA cm−2 at 0 VRHE, an onset potential of 0.40 VRHE and a half‐cell solar‐to‐hydrogen conversion efficiency of 1.9%, owing to the inhibited charge recombination, excellent charge transport and interface charge extraction. This work provides a significant insight to suppress deep‐level defect VSe by adjusting Se vapor pressure for efficient Sb2Se3 photocathode.

Suppressing Se Vacancies in Sb2Se3 Photocathode by In Situ Annealing with Moderate Se Vapor Pressure for Efficient Photoelectrochemical Water Splitting

Sulfur‐Supplemented Vapor Transport Deposition of Sb2S3 and Sb2(S,Se)3 for High‐Performance Hydrogen Evolution Photocathodes

Benchmark performance of low-cost Sb2Se3 photocathodes for unassisted solar overall water splitting

In-Sb Covalent Bonds over Sb2Se3/In2Se3 Heterojunction for Enhanced Photoelectrochemical Water Splitting

Crystal Growth Promotion and Interface Optimization Enable Highly Efficient Sb2se3 Photocathodes for Solar Hydrogen Evolution

One-step Hydrothermal Synthesis of Sn-doped Sb2Se3 for Solar Hydrogen Production

Magnetron Sputtered Sb2Se3-based Thin Films Towards High Performance Quasi-Homojunction Thin Film Solar Cells

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub> Thin Film Prepared via Magnetron Sputtering

In-situ construction of novel Sb2(S,Se)3/CdSe S-scheme heterojunction with enhanced photoelectrochemical performance

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub>Thin Film Prepared via Magnetron Sputtering

In-situ construction of S-scheme SnSe 2 /Se heterojunction photocathode with enhanced photoelectrochemical performance by a facile one-step CVD process

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Se-Elemental Concentration Gradient Regulation for Efficient Sb2(S,Se)3 Solar Cells With High Open-Circuit Voltages

Dual back interface engineering optimized charge carrier dynamics in Sb 2 (S,Se) 3 photocathodes for efficient solar hydrogen production

Heterogeneous Nucleation Regulation Amends Unfavorable Crystallization Orientation and Defect Features of Antimony Selenosulfide Film for High‐Efficient Planar Solar Cells

Thermal diffused post-selenization for enhancing the photovoltaic performance of thermally evaporated Sb 2 Se 3 solar cell

Scalable Low-Bandgap Sb2Se3 Thin-Film Photocathodes for Efficient Visible-Near-Infrared Solar Hydrogen Evolution.

Suppressing Buried Interface Nonradiative Recombination Losses Towards High‐efficiency Antimony Triselenide Solar Cells

Scalable Low-Band-Gap Sb2Se3 Thin-Film Photocathodes for Efficient Visible-Near-Infrared Solar Hydrogen Evolution

Crystal Growth Promotion and Defect Passivation by Hydrothermal and Selenized Deposition for Substrate-Structured Antimony Selenosulfide Solar Cells