Sulfur‐Supplemented Vapor Transport Deposition of Sb2S3 and Sb2(S,Se)3 for High‐Performance Hydrogen Evolution Photocathodes

Weitao Qiu,Renbo Lei,Xing Tang,Yupu Tang,Xianzhen Huang,Kai Zhang,Ziqiong Lin,Shuang Xiao,Xinwei Wang,Shihe Yang
DOI: https://doi.org/10.1002/solr.202300876
IF: 9.1726
2024-01-10
Solar RRL
Abstract:Chalcogen vacancy has long been recognized as a detrimental deep level defect that can induce severe charge recombination and diminish the quasi‐Fermi‐level splitting in Sb2S3 and Sb2Se3, especially when they are prepared by physical vapor deposition in vacuum. In order to counter this limitation, a sulfur‐supplemented vapor transport deposition technique is proposed, which intentionally introduces low pressure sulfur vapor and can thus afford low defect density antimony chalcogenide films. The resultant photocathodes modified with conformal TiO2 protection layer and Pt co‐catalyst demonstrate a photocurrent as high as 20 mA cm–2 along with a much improved fill factor and onset potential, achieving an applied bias photoconversion efficiency above 1%. This work highlights the importance of the vacancy defect passivation and the preferential crystalline orientation in the film in promoting the photocathode performance. TOC: A new PEC‐motivated semiconductor material family, Sb2S3, Sb2Se3 and Sb2(S,Se)3, prepared by a sulfur‐supplemented vapor transport deposition (SS‐VTD) technique, addressed the intrinsic shortcoming of the traditional VTD – high vacuum level promotes the chalcogen vacancy formation. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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