Photoinduced Generation of Metastable Sulfur Vacancies Enhancing the Intrinsic Hydrogen Evolution Behavior of Semiconductors

Guiyang Yu,Xin Zhou,Haitao Zhao,Wenxiang Zhang,Wenfu Yan,Gang Liu
DOI: https://doi.org/10.1002/solr.202100580
IF: 9.1726
2021-09-24
Solar RRL
Abstract:Hydrogen evolution over pristine semiconductor is desirable but seldom realized in powdered photocatalysis. It requires the catalyst surface simultaneously possessing efficient electron transfer and rapid H2 production properties. Current semiconductor photocatalysts have to depend on additional cocatalysts to achieve H2 evolution process. Here, theoretical and experimental results demonstrate that metastable sulfur vacancy could significantly enhance the intrinsic H2 evolution behavior of semiconductors. The hydrogen adsorption free energy (ΔGH) of CdS could be optimized to ΔGH=0.01 eV, much lower than that over thermodynamically stable vacancies (ΔGH=0.31 eV). The experiment was carried out based on a kind of supported CdS nanoparticles prepared with anion exchange method. A series of in-situ characterizations disclose that metastable sulfur vacancy forms under photoexcitation and is stable during the reaction. These metastable sulfur vacancies cause the formation of intermediate states between the valence band and the conduction band that increase transportation and utilization of photogenerated electrons. The conceptual finding of critical role of metastable vacancy in enhancing H2 evolution would bring new thinking on the design of semiconductor photocatalysts less dependent on cocatalysts.This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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