In vitro-in vivo extrapolation: estimation of human serum concentrations of chemicals equivalent to cytotoxic concentrations in vitro.

M. Gülden,H. Seibert

DOI: https://doi.org/10.1016/S0300-483X(03)00146-X

IF: 4.571

2003-08-01

Toxicology

Abstract:

What problem does this paper attempt to address?

Transparent P-Type Conducting Indium-Doped SnO2 Thin Films Deposited by Spray Pyrolysis

Z Ji,L Zhao,ZP He,Q Zhou,C Chen

DOI: https://doi.org/10.1016/j.matlet.2005.11.057

IF: 3

2006-01-01

Materials Letters

Abstract:Tansparent p-type conducting indium-doped SnO2 thin films were successfully prepared by spray pyrolysis. The films were characterized by X-ray diffraction, Hall effect, and UV–Visible absorption spectra. The results showed that for films with In/Sn ratio less than 0.3, the films were rutile structure of SnO2, while for film with In/Sn ratio of 0.4, peaks from In2O3 were observed. Hall effect measurement showed that the conducting type was dependent on both the process temperature and In/Sn ratio. For the films with In/Sn ratio=0.1 and 0.2, and process temperatures T≥600 °C, the films were p-type, while for T <600 °C, the films were n-type. For the films processed at the same temperature (T=700 °C), the films were n-type if In/Sn >0.2, and the films were p-type when In/Sn ≤0.2. In addition, UV–Vis absorption spectra showed no shift of the absorption edge when doped by indium for In/Sn ratio <0.4.
P-type Transparent Conducting Indium-Tin Oxide Thin Films Deposited by Spray-pyrolysis

JI Zhen-Guo,ZHAO Li-Na,HE Zuo-Peng,CHEN Chen,ZHOU Qiang

DOI: https://doi.org/10.3321/j.issn:1000-324X.2006.01.035

IF: 1.292

2006-01-01

Journal of Inorganic Materials

Abstract:P-type transparent conducting indium-tin oxide thin films were successfully prepared by spray pyrolysis and characterized by XRD, Hall and UV-Visible transmission spectra. The results show that with small In/Sn ratio, the films are in rutile SnO2 structure, and the films show n-type conductivity. With In/Sn ratio in the range of 0.06~0.25 and process temperature above 550 ℃, the films are still in rutile structure, but the conductivity type changes to p-type. For films with In/Sn ratio >0.3, conductivity type changes back to n-type. The process temperature is also an important parameter to the films. With In/Sn=0.2, the films show n-type for T < 550 ℃, and change to p-type for T > 550 ℃. The hole concentration saturates at T = 700 ℃, with hole concentration as high as 4×1018cm~3. Besides, all the films show transmission as high as 80% in the visible region.
Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Jie-lin DAI,Yao-yao JIANG,Feng-jiao SHANG,Zhi-tao ZHOU,Feng WANG,Min ZHAO,Jian-guo LV

DOI: https://doi.org/10.16552/j.cnki.issn1001-1625.2015.05.007

2015-01-01

Abstract:Zinc oxide films doped with various contents of indium were deposited on ZnO seed crystal by hydrothermal method. Microstructure,surface topography,transmission spectrum and photoluminescent spectrum were characterized by X-ray diffraction( XRD),atomic force microscopy( AFM),UV-Vis spectrometer and fluorescence spectrometer. Results showed that crystal phase structure of ZnO was not changed but crystallinity decreased with the variation of indium content. With increasing indium content,surface rms roughness and average grain size decreased,and the optical band gap Egincreased first then decreased. Each of the thin film had a violet band at about 405 nm. Effect of indium content on intensities and peaks position of these violet bands were studied,and the mechanism of violet emission was also discussed.
Effects of Gas Parameters on Properties of In2O3 Thin Films Deposited by Magnetron Sputtering

CAI Xi-kun,YUAN Zi-jian,ZHU Xia-ming,ZHANG Bing-po,QIU Dong-jiang,WU Hui-zhen

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2011.01.044

2011-01-01

Abstract:In2O3 thin films were prepared by R.F.magnetron sputtering.The effect of sputtering pressure and sputtering gas on the structure,photoelectric properties of In2O3 thin films were investigated.The X-ray diffraction(XRD) analysis shows that the films are polycrystalline and retain a cubic structure.As the sputtering pressure increasing,the grain size of In2O3 thin film increases.The film deposited at the pressure of 1 Pa has the highest mobility of 15.2 cm2/V·s and the lowest carrier concentration of 1.19×1019 cm-3.The carrier concentration of the film grown in O2 atmosphere decreases to 4.39×1013 cm-3 and the average optical transmittance in the infrared region(1.5-5.5 μm) reaches 85%,which is higher than that of the films grown in Ar atmosphere.It can be explained that the addition of O2 in sputtering resulted in oxygen vacancies decrease which leads to the reduction of the carrier concentration and the decrease of absorption of free carrier in the infrared region.
Trimethoprim-sulphamethoxazole and metronidazole as prophylaxis in colorectal surgery: a study of bioavailability after an oral single dose.

Y. Raab,I. Rasmussen,I. Odenholt,L. Påhlman

DOI: https://doi.org/10.1080/110241501750069819

Abstract:OBJECTIVE To evaluate oral single dose prophylaxis in colorectal surgery. DESIGN Prospective study. SETTING University hospital, Sweden. SUBJECTS 24 patients (13 women; 11 men; mean age 57 years, range 27-81) listed for elective colorectal operations. INTERVENTION At 0630 on the day of the operation all patients were given an oral dose of trimethoprim-sulphamethoxazole (TMP 160 mg and SMZ 800 mg) and metronidazole (2 g). The serum concentrations of TMP and SMZ were analysed in venous samples taken at the start and end of each operation. RESULTS The earliest operation started at 0830 and the last finished at 1700. The median (range) serum concentrations of TMP were 1.4 (0.7-2.6) mg/L (start) and 1.3 (1.0-2.8) mg/L (end), and of SMZ 35 (15-65) mg/L (start) and 33 mg (13-70) mg/L (end). The individual values were above or equal to the minimal inhibitory concentration (TMP 0.8 mg/L; SMZ 15.2 mg/L) for relevant gram-negative species. CONCLUSION Oral TMP/SMZ in the morning gives satisfactory serum concentrations independently of when the operation is done during the day. The regimen is simple and has the potential for being an effective alternative to intravenous prophylaxis.
Study on the Effects of Precursor Concentration and Annealing Process of In2O3 thin Films Prepared by Sol-gel Method

Tao Lin,Chaoyang Xie,Shuai Mi,Duo Liang,Haoxiang Huang,Jianan Xie,Jiaxing Wang,Jiale Dang,Shui Chen,Yantao Liu,Yupeng Duan

DOI: https://doi.org/10.1134/s1063782624600840

IF: 0.66

2024-11-04

Semiconductors

Abstract:In this paper, In 2 O 3 thin films were prepared on quartz glass substrate by sol-gel method using indium nitrate hydrate (In(NO 3 ) 3 · x H 2 O) as precursor, ethylene glycol(C 2 H 6 O 2 ) as solvent, and acetylacetone(C 5 H 8 O 2 ) as catalyst. The effects of precursor In 3+ concentration, annealing temperature, and annealing time on the properties of In 2 O 3 thin films were experimentally investigated. With As the concentration of In 3+ in the precursor solution increases, the diffraction peak of the (222) crystal plane becomes stronger and sharper, indicating that the preferred orientation of the In 2 O 3 film along the (222) crystal plane is becoming stronger and the crystallinity is getting better. The average grain size increases, the lattice strain and dislocation density decrease, the roughness and film thickness increase, and the optical transmittance and optical band gap decrease. With the increase of annealing temperature and annealing time, the diffraction peak intensity of In 2 O 3 film increases, the half-high width of the diffraction peak shrinks, the average grain size increases, the light transmittance increases, the crystal defects decrease, the crystal structure is more orderly, and the crystallinity of the film increases. At the same time, the optical band gap remains almost constant.

physics, condensed matter
Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

S. Venkatachalam,Hiroshi Nanjo,Fathy M.B. Hassan,Kazunori Kawasaki,Mitsuhiro Kanakubo,Takafumi Aizawa,Tsutomu Aida,Takeo Ebina

DOI: https://doi.org/10.1016/j.tsf.2010.07.034

IF: 2.1

2010-09-01

Thin Solid Films

Abstract:Indium tin oxide (ITO) thin films were deposited on glass substrates by ion beam sputter deposition method in three different deposition conditions [(i) oxygen (O2) flow rate varied from 0.05 to 0.20sccm at a fixed argon (1.65sccm) flow rate, (ii) Ar flow rate changed from 1.00 to 1.65sccm at a fixed O2 (0.05sccm) flow rate, and (iii) the variable parameter was the deposition time at fixed Ar (1.65sccm) and O2 (0.05sccm) flow rates]. (i) The X-ray diffraction (XRD) patterns show that the ITO films have a preferred orientation along (400) plane; the orientation of ITO film changes from (400) to (222) direction as the O2 flow rate is increased from 0.05 to 0.20sccm. The optical transmittance in the visible region increases with increasing O2 flow rate. The sheet resistance (Rs) of ITO films also increases with increasing O2 flow rate; it is attributed to the decrease of oxygen vacancies in the ITO film. (ii) The XRD patterns show that the ITO film has a strong preferred orientation along (222) direction. The optical transmittance in the visible spectral region increases with an increase in Ar flow rate. The Rs of ITO films increases with increasing Ar flow rate; it is attributed to the decrease of grain size in the films. (iii) A change in the preferred orientations of ITO films from (400) to (222) was observed with increasing film thickness from 314 to 661nm. The optical transmittance in the visible spectral region increases after annealing at 200°C. The Rs of ITO film decreases with the increase of film thickness.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Preparation of In_2S_3 Thin Films by Ultrasonic Spray Pyrolysis and the Influence of Post Rapid Thermal Process

Deren Yang

2008-01-01

Abstract:The In2S3 films have been prepared by ultrasonic spray pyrolysis technique.The morphology,structure and optical transmittance of In2S3 films have been characterized by XRD,SEM and spectrophotometer.The influence of post deposition annealing temperature on the film properties were studied.The results show that uniform and compact In2S3 films can be obtained by ultrasonic spray pyrolysis method.The post RTP can enhance crystallization of the In2S3 films with weak influence on optical transmittance.The band gap of the In2S3 thin films is about 2.25～2.38 eV.
Film thickness effect on structural, optical and electrical properties of indium oxide (In2O3) thin films grown via sol-gel method

R. Nouadji,A. Attaf,A. Derbali,A. Bouhdjer,H. Saidi,M.S. Aida,F. Zeribi,O. Benkhetta,R. Messemeche,M. Nouadji,N. Attaf

DOI: https://doi.org/10.3233/mgc-210063

2021-12-22

Main Group Chemistry

Abstract:In this work, we investigated the effect of the thickness on structural, morphological, optical, and electrical properties of In2O3 thin films synthesized via by sol–gel spin coating technique. The prepared samples were characterized by various techniques including X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray (EDX) spectra, UV-Vis-NIR spectrophotometer as well as the electrical measurements via the four-probe technique. The XRD analysis reveals that the films have a cubic crystalline structure, with (222) preferential orientation. The crystallite size values of the films were varied from 14 to 27 nm. The (SEM) images indicated that the homogenous and smooth surface with better adherent to the substrate surface. The EDX spectrum reveals the presence of In and O element necessary for In2O3 films for film formation. Excess of oxygen is observed due to the substrate contribution. The transmittance results exhibit that the films are highly transparent, more than 75% in the visible range from 400 nm to 800 nm is measured. The estimated band gap energy is found to increase with increasing film thickness (3.37–3.7 eV). The electrical resistivity of the In2O3 thin films substantially decreases with the increasing film thickness from 1.48×10-4 to 1.3×10-3 Ω.cm.

chemistry, multidisciplinary
EFFECT OF BORIC ACID CONCENTRATIONS ON THE CHARACTERIZATION OF THE In2O3 THIN FILMS GROWTH BY SPRAYING PYROLYSIS METHOD

M. TEMİZ,R. G. YILDIRIM,M. B. BEDİR,M. ÖZTAŞ,,,,

DOI: https://doi.org/10.15251/djnb.2020.153.689

2020-09-01

Digest Journal of Nanomaterials and Biostructures

Abstract:Indium oxide thin films with undoped and boron doped were produced by spray pyrolysis method at a substrate temperature of 380 °C on the glass substrate using boric acid (H3BO3) as the dopant source. The effects of doping concentration on the features of undoped and boron doped In2O3 thin films have been investigated. The XRD analyses indicate that all thin films are polycrystalline with cubic structure, which is the dominant peaks of the (222), (400), (440) and (622) reflection planes with lattice parameter, approximately 9-10 Å. As the boron enters the structure, a decrease in band gap energy occurs. This decrease continues up to 0.03 M of boron additives and tends to increase again above this value. As the boron concentration increases up to 0.03 M, the resistance value decreases and the carrier concentration and Hall mobility values increase, which caused by the scattering of carriers that are severely weakened due to increased crystal quality.

materials science, multidisciplinary,nanoscience & nanotechnology
In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

徐天宁,吴惠桢,张莹莹,王雄,朱夏明,原子健

DOI: https://doi.org/10.7498/aps.59.5018

IF: 0.906

2010-01-01

Acta Physica Sinica

Abstract:Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In2O3 film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In2O3 as active channel layers. The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2/V·s, an on-off current ratio of 3×103, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.
Fabrication and performance of indium oxide based transparent thin film transistors

Xu Tian-Ning,Huizhen Wu,Zhang Ying-Ying,Xiong Wang,Xiaming Zhu,Zijian Yuan

DOI: https://doi.org/10.7498/aps.59.5018

IF: 0.906

2010-01-01

Acta Physica Sinica

Abstract:Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature.The In2O3 film was polycrystalline with a preferred(111) orientation and a grain size of 33 nm was estimated.The bottom-gate staggered thin film transistors(TFTs) were fabricated by standard photolithography,with In2O3 as active channel layers.The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2 /V·s,an on-off current ratio of 3×103,and a threshold voltage of-0.9 V.Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.
Fluorinated aminoalkoxide and ketoiminate indium complexes as MOCVD precursors for In2O3 thin film deposition

Tsung-Yi Chou,Yun Chi,Shu-Fen Huang,Chao-Shiuan Liu,Arthur J Carty,Ludmila Scoles,Konstantin A Udachin

DOI: https://doi.org/10.1021/ic034588x

2003-09-22

Abstract:The syntheses of two distinctive types of indium complex derived from trimethylindium (InMe(3)) are reported. The first kind has a generalized structural formula [InMe(2)(amak)](2), where (amak)H is an abbreviation for a series of chelating amino alcohol ligands HOC(CF(3))(2)CH(2)NHR, R = (CH(2))(2)OMe (1), Me (2), and Bu(t) (3), as well as HOC(CF(3))(2)CH(2)NMe(2) (4); while the second type of complex is illustrated by [InMe(2)(keim)] (5), for which (keim)H is a tridentate ketoimine ligand of structural formula O=C(CF(3))CH(2)C(CF(3))=NCH(2)CH(2)NMe(2). The solid-state structures of 2 and 5 were determined using single crystal X-ray diffraction studies. For the aminoalkoxide complexes 2-4, the existence of dimeric In(2)O(2) core structures in the solid state has been established with the amino fragment located trans to the alkoxide ligands, in a molecular arrangement which is in contrast to the distorted, trigonal bipyramidal geometry observed for the ketoiminate complex 5. Moreover, VT NMR studies of 2 revealed a rapid dimer-to-monomer equilibration and simultaneous rupture of the N-->In dative interaction, affording two interconvertible isomers related by having the N-Me substituents in either trans or cis dispositions. For complexes 2 and 5, deposition of In(2)O(3) thin films was successfully conducted at temperatures 400-500 degrees C, using O(2) as the carrier gas to induce indium oxide deposition and to suppress carbon impurity present in the thin film. Scanning electron micrographs (SEMs) revealed the surface morphologies. The atomic composition of these films was examined by both X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering (RBS) methods, while X-ray diffraction studies (XRD) confirmed the formation of a preferred orientation along the (222) planes.
Preparation of Bismuth Oxide Thin Films by Spray Pyrolysis Method and Its Characterizations

C. H. Jadhav,Pavan K. Pagare,K. K. Inamdar,L. D. Kadam

DOI: https://doi.org/10.1002/masy.201800198

2019-10-01

Macromolecular Symposia

Abstract:The Bi2O3 thin films were prepared onto glass substrates by spray pyrolysis method. The Bi2O3 thin films optimized at 320 °C spray pyrolysis temperature. The crystal structure, crystallite size, and surface morphology of Bi2O3 thin films were studied by X‐ray diffraction (XRD) and scanning electron microscopy (SEM) techniques, respectively. The X‐ray diffraction pattern of Bi2O3 thin films show polycrystalline in nature. The SEM images show porous morphology of Bi2O3 thin films. The optical absorption spectra of films were examined in order to study their band gap energy. The optical study shows a direct band gap of 2.90 eV for Bi2O3 films.
Bulk and surface characterization of In$_2$O$_3$(001) single crystals

Daniel R. Hagleitner,Peter Jacobson,Sara Blomberg,Karina Schulte,Edvin Lundgren,Markus Kubicek,Jürgen Fleig,Frank Kubel,Christoph Puls,Andreas Limbeck,Herbert Hutter,Lynn A. Boatner,Michael Schmid,Ulrike Diebold

DOI: https://doi.org/10.48550/arXiv.1804.04478

2018-04-12

Materials Science

Abstract:A comprehensive bulk and surface investigation of high-quality In$_2$O$_3$(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 $\pm$ 0.5 $\times$ 10$^5$ {\Omega} cm, which translates into a carrier concentration of $\approx$10$^{12}$ cm$^{-3}$. The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) {\AA} from the previously accepted value of 10.117 {\AA}. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300 {\deg}C) surface show a step height of 5 {\AA}, which indicates a preference for one type of surface termination. The surfaces stay flat without any evidence for macroscopic faceting under any of these preparation conditions. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5 {\AA} height under reducing conditions, with a surface structure corresponding to a strongly distorted indium lattice. Scanning tunneling spectroscopy (STS) reveals a pronounced surface state at the Fermi level ($E_F$). Photoelectron spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to atomic oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV is observed for the reduced surface, while the band bending of the oxidized surface is of the order of 0.1 eV or less.
Optical performance of Tin doped Indium Oxide (ITO) thin films prepared by sol gel dip coating techniques using acrylamide route

G. Ramanathan,K. R. Murali

DOI: https://doi.org/10.1007/s11082-022-03973-5

IF: 3

2022-08-29

Optical and Quantum Electronics

Abstract:At present various oxide of metal semiconductors play a significant role in the field of electronics. Most of the semiconductor devices exploit the special characteristics of the junction between a p-type and n-type semiconductor. These devices can be made extremely small in size and they are incredibly fast in their response. Generally metal have good reflectivity in the electromagnetic region of infrared and visible radiation. Indium oxide material doped with tin (ITO) is recently used in the substrate material for various applications, because it has special properties of low resistivity and high optical transmittance in the visible region. In this paper, we prepare ITO films with different tin concentration (5%, 10%, 15%, 20%, 30%, 40%, 50%, 60% and 70%) using acrylamide sol gel dip coated method and its results were reported. TCO materials have good electrical conductivity and optical transparency, and also it has n-type semiconductor with a band gap between 3.5 and 4.3 eV. An X-ray study indicates all the prepared samples had bixbyte structure. Optical behaviour of materials can be understood in the near infrared and visible spectrum. Some optical parameters of refractive index, extinction coefficient and dielectric constant of ITO films are calculated from the data received from the UV transmission studies. Using W-D model the dispersion of refractive index was calculated. The optical band gap, oscillator energy, dispersion energy and optical conductivity and N/m* ratio were estimated and this material is well suitable for dye sensitized solar cell and sensor application.

engineering, electrical & electronic,optics,quantum science & technology
Effects of the Variations of Oxide Structure on the Electrical and Optical Properties of ITO Films

L Fang,DM Zhuang,JH Zhang,JJ Liu

DOI: https://doi.org/10.1117/12.401723

2000-01-01

Abstract:In the paper, conductive and transparent indium tin oxide (ITO) films have been prepared by reactive magnetron sputtering using powder target of In2O3 with 10wt% SnO2 in an Ar/O2 atmosphere. The structural, composition, optical and electrical properties of the films deposited at different substrate temperature (150 approximately 350 degrees Celsius) have been investigated. Some interesting results obtained in this work, which might be somewhat new, are that the variations of oxide structure and concentration greatly influence the electrical properties of ITO films. X-ray diffraction patterns and X-ray photoelectron spectroscopy (XPS) show that the films deposited at substrate temperature 250 degrees Celsius or more are consist of In2SnO5 and In2O3 with no Sn3O4. When substrate temperature is lowered to 150 degrees Celsius, Sn3O4 occurs besides In2O3 in the films. The above result indicates the occurrence of Sn3O4 is unfavorable to the conductive properties. When substrate temperature is increased, Sn3O4 disappears, and oxygen vacancy and the electron donor Sn+4 concentration are increase, which result in a great improvement of the electrical and optical properties.
Electrical and Optical Properties of In₂O₃ Thin Films Deposited on Sapphire Substrate

W Cui,X L Zhao,Y H An,G S Yao,Z P Wu,P G Li,L H Li,C Cui,W H Tang

DOI: https://doi.org/10.1166/jnn.2018.14111

2018-02-01

Abstract:In2O3 thin films were prepared on c-plane sapphire substrates using laser molecular beam epitaxy technique. The X-ray diffraction (XRD) patterns revealed that the In2O3 thin films were highly oriented along the (111) direction. The intensity of (222) diffraction peaks mainly depend on growth temperature, and the crystallite sizes mainly depend on oxygen pressure. The carrier concentrations exhibit a decrease with increasing growth temperature and oxygen pressure, meantime, the resistivity increase. The red shift of In2O3 thin films respect to that of bulk In2O3 can be explained by defect energy levels formation, the blue shift of In2O3 thin films depends on carrier concentration, can be explained by Burstein-Moss band-filling effect.
Deposition and characterization of (In1-Al )2O3 films with tunable photoelectric properties

Xuejian Du,Xianwu Xiu,Wei Tang,Shouzhen Jiang,Baoyuan Man

DOI: https://doi.org/10.1016/j.vacuum.2021.110680

IF: 4

2022-01-01

Vacuum

Abstract:The ternary (In1-x Al x )2O3 (IAO) films with tunable photoelectric properties were prepared on the SiO2 (110) substrates by metal organic chemical vapor deposition (MOCVD). The influences of different In-Al contents x [Al/(In+Al) atomic ratio] on the structural, morphological and photoelectric properties of the IAO films were studied. XRD analyses showed that the films turned from high quality cubic In2O3 structure to amorphous phase as the In content decreased. All the IAO films exhibited outstanding optical properties with mean transmittances over 84% in the visible range. The optical band gap for the films could be modulated from 3.71 to 5.29 eV as the x value varied from 0 to 0.9. The Hall mobility and carrier concentration declined while the resistivity increased with the In content decreased. The obtained results indicate the properties of IAO films can be effectively modulated by changing the In-Al components, thus this material can be applied in the fabrication of short wavelength photoelectric devices.

materials science, multidisciplinary,physics, applied

In vitro-in vivo extrapolation: estimation of human serum concentrations of chemicals equivalent to cytotoxic concentrations in vitro.

Transparent P-Type Conducting Indium-Doped SnO2 Thin Films Deposited by Spray Pyrolysis

P-type Transparent Conducting Indium-Tin Oxide Thin Films Deposited by Spray-pyrolysis

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Effects of Gas Parameters on Properties of In2O3 Thin Films Deposited by Magnetron Sputtering

Trimethoprim-sulphamethoxazole and metronidazole as prophylaxis in colorectal surgery: a study of bioavailability after an oral single dose.

Study on the Effects of Precursor Concentration and Annealing Process of In2O3 thin Films Prepared by Sol-gel Method

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

Preparation of In_2S_3 Thin Films by Ultrasonic Spray Pyrolysis and the Influence of Post Rapid Thermal Process

Film thickness effect on structural, optical and electrical properties of indium oxide (In2O3) thin films grown via sol-gel method

EFFECT OF BORIC ACID CONCENTRATIONS ON THE CHARACTERIZATION OF THE In2O3 THIN FILMS GROWTH BY SPRAYING PYROLYSIS METHOD

In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

Fabrication and performance of indium oxide based transparent thin film transistors

Fluorinated aminoalkoxide and ketoiminate indium complexes as MOCVD precursors for In2O3 thin film deposition

Preparation of Bismuth Oxide Thin Films by Spray Pyrolysis Method and Its Characterizations

Bulk and surface characterization of In$_2$O$_3$(001) single crystals

Optical performance of Tin doped Indium Oxide (ITO) thin films prepared by sol gel dip coating techniques using acrylamide route

Effects of the Variations of Oxide Structure on the Electrical and Optical Properties of ITO Films

Electrical and Optical Properties of In₂O₃ Thin Films Deposited on Sapphire Substrate

Deposition and characterization of (In1-Al )2O3 films with tunable photoelectric properties