Study on the preparation and the film-forming properties of Mo-and Al-doped ZnO ceramic targets
Zhaoyang Li,Bin Li,Jiwen Li,Yahu Song,Yongwei Wang,Zhiyong Chen,Yixu Niu
DOI: https://doi.org/10.1007/s10854-024-13870-0
2024-11-29
Journal of Materials Science Materials in Electronics
Abstract:In this paper, ZnO, AZO, MZO, and MAZO ceramic targets and films were prepared by spark plasma sintering technology and RF magnetron sputtering technology, respectively. First, the influence of doping Mo and Al atoms on the properties of ZnO targets was studied. The results show that the self-made targets have good crystallization properties. The introduction of Mo and Al atoms improves the sintering activities, the relative densities, and conductivities of AZO, MZO and MAZO targets. Compared with AZO targets, the relative densities of the MZO and MAZO targets are significantly increased. Then, the film-forming properties of targets were studied. In terms of electrical properties: the conductivity, mobility and carrier concentration of MZO, AZO and MAZO films are improved after doping Mo and Al atoms. Compared with AZO films, the resistivities of MZO and MAZO films are effectively reduced. However, after doping Mo atoms, the absorption rate and extinction coefficient of MZO films increase, and the transmittance decreases. It is worth noting that Mo-Al co-doping can eliminate the adverse effects of Mo single-doping on the optical properties of ZnO-based films. Finally, the MAZO films with excellent photoelectric properties were obtained (transmittance: 89.31%, resistivity: 3.36 × 10 −4 Ω·cm).
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied