Electrical and Optical Properties of Molybdenum-Doped Zno Transparent Conductive Thin Films Prepared by Dc Reactive Magnetron Sputtering

Chenguo Wu,Jie Shen,Jin Ma,Sanpo Wang,Zhuangjian Zhang,Xiliang Yang

DOI: https://doi.org/10.1088/0268-1242/24/12/125012

IF: 2.048

2009-01-01

Semiconductor Science and Technology

Abstract:Molybdenum-doped ZnO (ZMO) transparent conductive thin films were prepared by dc reactive magnetron sputtering on glass substrates from metallic targets. The structure, surface morphology, chemical state, optical and electrical properties of ZMO films were studied. The XRD pattern confirmed that ZMO thin films were polycrystalline with the hexagonal crystal structure, and the surface morphology measured by AFM demonstrated that the surface was smooth and compact. Chemical state analysis revealed that molybdenum atoms existed mainly in Mo(6+) and Mo(5+) ions but not in only single oxidation states. The minimum resistivity of 7.9 x 10(-4) Omega cm is obtained with a carrier mobility of 27.3 cm(2) V(-1) s(-1) and a carrier concentration of 3.1 x 10(20) cm(-3), and the average transmittance is more than 85% in the visible light region. The refractive index and extinction coefficient at the wavelength of 550 nm are 1.853 and 7.0 x 10(-3), respectively. The energy bands increase from 3.37 eV to 3.8 eV with the increase in carrier concentrations and the carrier effective mass m* is 0.33 times the electron mass.