Abstract:This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and Schrödinger equations using the effective mass approximation. Then mobility is calculated by the Kubo–Greenwood formula accounting for the remote phonon scattering (RPS) as well as the intrinsic phonon scatterings, including the acoustic phonon, homopolar phonon, optical phonon scatterings, and Fröhlich interaction. Using the above method, the mobility degradation due to remote phonon is comprehensively explored in single- and dual-gate InSe FETs utilizing SiO2, Al2O3, and HfO2 as gate dielectric respectively. We unveil the origin of temperature, inversion density, and thickness dependence of carrier mobility. Simulations indicate that remote phonon and Fröhlich interaction plays a comparatively major role in determining the electron transport in InSe. Mobility is more severely degraded by remote phonon of HfO2 dielectric than Al2O3 and SiO2 dielectric, which can be effectively insulated by introducing a SiO2 interfacial layer between the high-κ dielectric and InSe. Due to its smaller in-plane and quantization effective masses, mobility begins to increase at higher density as carriers become degenerate, and mobility degradation with a reduced layer number is much stronger in InSe compared with MoS2.

Remote Charge Scattering: a Full Coulomb Interaction Approach and Its Impact on Silicon Nmos FinFETs with HfO 2 Gate Dielectric

Impacts of Remote Coulomb Scattering on Hole Mobility in Si p-MOSFFETs at Cryogenic Temperatures

Estimation of Hole Mobility in Hydrogen-Terminated Diamond MOSFET with High-K Stacked Gate Dielectrics

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

An Assessment of the Mobility Degradation Induced by Remote Charge Scattering

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Deep Understanding of Oxide Defects for Stochastic Charging in Nanoscale MOSFETs

Simulation of "ab Initio" Quantum Confinement Scattering in Utb Mosfets Using Three-Dimensional Ensemble Monte Carlo

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack.

On the Effect of Scattering in Schottky Barrier MOSFETs

Implementing Remote Doping and Suppressed Scattering in MoS2 Field-Effect Transistor Using CMOS-Compatible Process

The Study of Electron Mobility on Ultra-scaled Silicon Nanosheet FET

The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

A finite volume method for the multi subband Boltzmann equation with realistic 2D scattering in double gate MOSFETs

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

Influence of Gate-Source/Drain Misalignment on the Performance of Bulk Finfets by A 3d Full Band Monte Carlo Simulation

Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs