Abstract:The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model. The interface between the silicon and the silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function (ACVF). The oxide layer is modeled in the virtual crystal approximation (VCA) using fictitious SiO2 atoms. <110>-oriented nanowires with different diameters and randomly generated surface configurations are studied. The experimentally observed ON-current and the threshold voltage is quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental results.

What problem does this paper attempt to address?

This paper attempts to solve the problem of the influence of interface roughness scattering (IRS) on device performance in silicon nanowire field - effect transistors (NWFETs). Specifically, the article focuses on how interface roughness significantly affects the electrical characteristics of NWFETs, such as on - current and threshold voltage at the nanoscale, and studies these effects through full three - dimensional quantum transport simulations. ### Background and Problem Description of the Paper As the size of traditional planar metal - oxide - semiconductor field - effect transistors (MOSFETs) approaches the nanometer level, problems such as short - channel effects (SCE), large off - state currents, and poor electrostatic control gradually emerge, limiting their performance improvement. Nanowire field - effect transistors (NWFETs), especially those in the gate - all - around (GAA) configuration, are considered promising candidates for overcoming these problems and building next - generation switching devices. However, in ultra - small - sized NWFETs, interface roughness scattering (IRS) becomes one of the key factors affecting electron mobility. ### Research Objectives The main objectives of this paper are: 1. **Quantify the influence of interface roughness scattering**: Through full three - dimensional quantum transport simulations, study the specific influence of interface roughness scattering on on - current, threshold voltage, and mobility in silicon nanowires (Si NWs) with different diameters. 2. **Verify experimental results**: Compare the simulation results with experimental data to verify the validity of the model and explain the phenomena observed in the experiments, such as the trend that the on - current first increases and then decreases as the diameter decreases. 3. **Explore optimization paths**: Based on the simulation results, explore how to reduce the influence of IRS by improving device structure or material properties, thereby improving the performance of NWFETs. ### Methods and Models To achieve the above objectives, the authors adopted the following methods: - **Atomic - level surface generation**: Use the experimentally - derived autocorrelation function (ACVF) to generate an atomic - level representation of the silicon - silicon dioxide interface, taking into account the statistical characteristics of interface roughness. - **Full - band quantum transport simulation**: Based on the sp3d5s* tight - binding model (TB model), combined with a Poisson equation solver, a full three - dimensional quantum transport simulation was carried out. - **Oxide layer modeling**: Under the virtual crystal approximation (VCA), use the hypothetical SiO2 atoms to explicitly model the oxide layer, taking into account the penetration effect of the wave function in the oxide layer. ### Main Findings Through simulations, the authors found the following key results: - **Positive shift of threshold voltage**: Due to the interface roughness causing the effective diameter of the nanowire to decrease, the threshold voltage shifts in the positive direction. - **Reduction of on - current**: IRS significantly reduces the on - current, especially when the diameter is less than 3 nm, and this effect is particularly obvious. - **Decrease in mobility**: As the nanowire diameter decreases, the trend of mobility decrease caused by IRS intensifies, which is in line with experimental observations. In summary, this study provides an important theoretical basis for understanding the influence of interface roughness scattering on the performance of NWFETs at the nanoscale and points out the direction for designing more efficient nano - devices in the future.

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