Abstract:Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in devices differs significantly from that of suspended extended nanowires, due to phonon scattering at the contact interfaces. We show that thermal conductance and the phonon transport regime can be tuned from ballistic to diffusive by varying the surface roughness of the nanowires and their length. In devices containing short crystalline wires phonon tunneling occurs and enhances the conductance beyond that of single contacts.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in silicon nanowire devices at the actual scale, how is the heat - transfer behavior affected by the nanowire length, surface roughness, and contact interface. Specifically, the author studied the heat - transfer characteristics in silicon nanowire (SiNW) devices with a thickness of 10 nm and a length of 10 to 100 nm through atomic - level simulations. These nanowires are sandwiched between two large - scale heat reservoirs, aiming to explore the following points: 1. **Heat - transfer mechanism**: How is the heat transfer in actual devices different from that in suspended extended nanowires? In particular, the influence of phonon scattering at the contact interface on thermal conductivity. 2. **Thermal conductivity regulation**: By changing the surface roughness and length of the nanowires, can the heat - transfer mode be adjusted from ballistic transport to diffusive transport? 3. **Tunneling effect in short nanowires**: Is there a phonon tunneling phenomenon in short crystalline nanowires, and can this phenomenon enhance the thermal conductivity beyond that of a single contact point? ### Main findings: - **Ballistic transport and contact - interface scattering**: For low - frequency phonons (< 4 THz), the heat transfer is ballistic and is mainly affected by contact - interface scattering. As the frequency increases, some bulk modes can pass through the device by the tunneling effect, resulting in a higher thermal conductivity in nanowires shorter than 30 nm than that at a single contact point. - **Effect of surface amorphization**: Surface amorphization can significantly reduce the thermal conductivity, especially at room temperature, with a maximum reduction of up to 6 times. However, for high - frequency phonons, the amorphous shell will cause more scattering, thus entering the diffusive - transport mode. - **Importance of contact - interface scattering**: Even in systems with strong surface scattering and mainly diffusive transport, the contribution of contact - interface scattering to thermal resistance is still significant. - **Trend of thermal conductivity at low temperatures**: For nanowire devices with a core - shell structure, the thermal conductivity has a \( T^{2} \) relationship with temperature at low temperatures, which is consistent with the experimental results. Through these studies, the author has revealed the unique behavior of heat transfer in nanowire devices and provided a theoretical basis for the design of nano - electronic devices for efficient heat management.

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