Abstract:Over the past few years tremendous progress has been made on the process, application, device physics and compact modeling of nanowire MOSFETs. We would like to review the above aspects of silicon-based nanowire, focusing on its crucial compact models and the circuit performance demonstration based on our group research work and understanding on nanowire MOSFET progress. Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. Both the top-down (Singh et al., 2008) and bottom-up (Lu & Lieber, 2006) approaches are widely studied to prepare ultra small nanowire. With bottom-up method, nanowires are generally synthesized by using metal nanoclusters as catalysts via a vapor-liquid-solid process (Lu & Lieber, 2006). After growth nanowires are transferred to silicon substrate to form FET structure. With top-down technique there are various fabrication approaches, such as hard mask trimming, etching in H2 ambient and stress limited oxidation (Singh et al., 2008). 5-nm gate length device has been demonstrated (Liow et al., 2008). Nanowire MOSFETs prepared with both methods find application in logic circuits (Singh et al., 2008), memory (Singh et al., 2008) and sensors (Stern et al., 2008). Due to the quantum confinement in cross section of nanowire MOSFETs, especially of nanowires with diameter smaller than 15nm, electron mobility behaves differently from its bulk counterpart. Phonon-limited electron mobility decreases with reducing the wire size (Kotlyar et al., 2004) while total electron mobility is enhanced due to volume inversion at high transverse field (Jin et al., 2007). Although whether or not ballistic transport can occur in the silicon nanowire MOSFETs with ultrasmall channel length is disputable (Ferry et al., 2008), it deserves our attention. In the ballistic transport regime, carrier scattering in the device channel is totally suppressed. The study of ballistic transport in nanowire MOSFETs provides the upper limit to their performances. Under extreme scaling of nanowire MOSFETs, the atoms in nanowire cross section are countable. It is believed that the change in bandstructure of one dimensional nanowire influences the device performances (Neophytou et al., 2008). The above mentioned phenomenon are studied and simulated with various numerical approaches and also need to be accounted for in the advanced compact models.

3D Simulation of Nanowire FETs using Quantum Models

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

Silicon-Based Nanowire Mosfets: From Process And Device Physics To Simulation And Modeling

Two Dimensional Quantum Mechanical Modeling of Nanotransistors

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

Nanoscale FinFET Simulation: A Quasi-3D Quantum Mechanical Model Using NEGF

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Towards Exascale Simulations of Nanoelectronic Devices in the GW Approximation

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Multiple-Gate FET Quantum Dot Behavior and a Proximity Charge Sensing Model

3D Monte Carlo Simulation of gate-All-around germanium nMOSFET with Effective potential Quantum Correction.

Compact model and projection of silicon nanowire tunneling transistors (NW-tFETs)

A Compact Model for Nanowire Tunneling-FETs

A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

Quantum simulation investigation of work-function variation in nanowire tunnel FETs

Numerical Investigation on the Junctionless Nanowire FET