Abstract:After more than 30 years of validation of Moore's law, the CMOS technology has already entered the nanoscale (sub-100nm) regime and faces strong limitations. The nanowire transistor is one candidate which has the potential to overcome the problems caused by short channel effects in SOI MOSFETs and has gained signifi - cant attention from both device and circuit developers. In addition to the effective suppression of short channel effects due to the improved gate strength, the multi-gate NWFETs show excellent current drive and have the merit that they are compatible with conventional CMOS processes. To simulate these devices, accurate modeling and calculations based on quantum mechanics are necessary to assess their performance limits, since cross-sections of the multigate NWFETs are expected to be a few nanometers wide in their ultimate scaling. In this paper we have explored the use of ATLAS including the Bohm Quantum Potential (BQP) for simulating and studying the shortchannel behaviour of nanowire FETs.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: As CMOS technology enters the nanoscale (sub - 100nm), limiting factors such as short - channel effects (SCEs) become more and more significant, and the performance improvement of traditional MOSFET devices is facing a bottleneck. To overcome these problems, researchers have turned their attention to new device structures, such as nanowire field - effect transistors (NWFETs). In particular, multi - gate nanowire field - effect transistors (Multi - gate NWFETs) have received extensive attention because they can effectively suppress short - channel effects, provide excellent current - driving capabilities, and are compatible with traditional CMOS processes. However, when the size of these devices is reduced to a few nanometers, quantum effects begin to significantly affect their performance. Therefore, to accurately simulate and evaluate the behavior of these nanowire field - effect transistors, especially in terms of short - channel behavior, a quantum - mechanical model needs to be introduced. Specifically, this paper explores the method of using the ATLAS tool in combination with the Bohm quantum potential (BQP) to simulate nanowire field - effect transistors, in order to better understand and predict the performance limits of such devices under extreme miniaturization conditions. ### Summary of the main problems in the paper: 1. **Challenges faced by traditional MOSFETs**: With the progress of Moore's law, CMOS technology has encountered problems such as electrostatic limitations, source - drain tunneling, carrier mobility decline, process variation, and static leakage after entering the nanoscale. 2. **Advantages of nanowire field - effect transistors**: As a potential solution, nanowire FETs have attracted attention due to their effective suppression of short - channel effects, good current - driving capabilities, and compatibility with CMOS processes. 3. **Impact of quantum effects**: When the cross - section of nanowire FETs is reduced to a few nanometers, quantum effects cannot be ignored and must be accurately modeled by a quantum - mechanical model. 4. **Application of Bohm quantum potential**: To simulate these quantum effects, this paper proposes to use the Bohm quantum potential model in ATLAS and calibrates it by comparing the results with the two - dimensional Schrödinger - Poisson model, thus successfully predicting the short - channel behavior of nanowire FETs. Through the above research, the author aims to provide theoretical support and technical means for the design and optimization of future nanoscale electronic devices.

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