Abstract:Field-effect transistors based on conjugated polymers have reached mobilities comparable to those of polysilicon rivals and recently demonstrated self-healing capability, indicating their great potential for use in future plastic electronics. For practical applications, the operating speed of polymer transistors must be increased, which requires not only high mobility but also short channel length. Decreasing channel length is an important engineering issue for high-frequency operation and high-density integration. However, shortening channel length has proved challenging because of the poor compatibility of conjugated polymer transistors with conventional lithography; i.e., fragile polymer semiconductor films may be damaged during lithographic processes. The underlying device physics, particularly of those with short channels, remain poorly understood. Here, we fabricated polymer transistors with channel lengths below 1000 nm. A dry self-patterning process lowered the gate leakage current to less than 10–12 A, enabling quantitative analysis of devices with very short channels. We found that a high Schottky barrier with a sizable space-charge region (>1 μm) was responsible for the high off-state current because the space-charge zones at the source and drain joined when the channel was short, lowering the energy barrier to carrier diffusion in the off state. Such diffusion was suppressed simply by controlling the molecular alignment so that the deep traps distributed at the domain boundaries limited the carrier diffusion and thus suppressed the off-state current.

Modelling the Threshold-Voltage Shift of Polymer Thin-Film Transistors under Constant and Variable Gate-Bias Stresses

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress

Thin-Film Transistor V-th Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Anomalous Bias-Stress-Induced Unstable Phenomena of Inzno Thin-Film Transistors Using Ta2o5 Gate Dielectric

Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress

A gate-stress-induced ΔVth model reflecting impact of electric field in IGZO thin film transistors

The stress-affected carrier injection and transport in organic semiconductor devices

Bias stress induced threshold voltage instability in solution processed organic thin film transistor

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

Strain-dependent charge trapping and its impact on the operational stability of polymer field-effect transistors

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Suppressing off -state current via molecular orientation in submicrometer polymer field-effect transistors

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors

Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Mechanism Study of Positive-Bias Stress Stability for Solution Processed Oxide Semiconductor TFT

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors