Abstract:Thin-film transistors (TFTs) with solutionprocessed indium oxide (In 2 O 3 ) as the channel layer and with aluminium oxide as the gate dielectric were fabricated. The fabricated In 2 O 3 TFTs are tested for reliability in low-voltage operation. Measurement results show that the threshold voltage (V th ) increases from 0.6 V to 1.4 V under positive bias stress (PBS) and decreases from 0.55 V to 0.22 V under negative bias stress (NBS). Upon relaxation for long enough time, Vth restores close to the pristine values. When switching the In 2 O 3 TFTs repeatedly by applying a pulsed voltage of ±3V to the gate, the Vth shift (ΔVth) depends on the pulse width. While ΔVth generally decreases with the pulse width under pulsed NBS, Vth instability is considerably worse under pulsed PBS, particularly when the pulse width is between 5 μs and 50 ms. Apart from revealing the differences in the trapping and de-trapping of electrons and holes at the In 2 O 3 /Al 2 O 3 interface, the results have implications for using the In 2 O 3 TFTs in circuits in which they are biased or switched repeatedly.

Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

Nearly Reversible Threshold Voltage Shifts with Low-Voltage Bias Stress in Solution-Processed In<inf>2</inf>O<inf>3</inf> Thin-Film Transistors

Intrinsic hole mobility and trapping in a regio-regular poly(thiophene)

Modelling the Threshold-Voltage Shift of Polymer Thin-Film Transistors under Constant and Variable Gate-Bias Stresses

Bias stress induced threshold voltage instability in solution processed organic thin film transistor

Short Channel Effects in Regioregular Poly(Thiophene) Thin Film Transistors

Study of Traps in Low-Temperature Polysilicon Thin Film Transistors Using a Current Transient Method

Impact of Bias Stress and Endurance Switching on Electrical Characteristics of Polycrystalline ZnO-TFTs with Al 2 O 3 Gate Dielectric

Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Threshold Voltage Instabilities in Perpetual Switching of Low-Voltage Thin-Film Transistors with Solution-Processed In<inf>2</inf>O<inf>3</inf> Channel Layer

Threshold Voltage Instabilities In Perpetual Switching Of Low-Voltage Thin-Film Transistors With Solution-Processed In2o3 Channel Layer

Long-term electrical characteristics of a poly-3-hexylthiophene water-gated thin-film transistor

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Mechanism Study of Positive-Bias Stress Stability for Solution Processed Oxide Semiconductor TFT

Non-exponential transients and the evaluation of stress in (disordered) organic thin film transistors

16‐3: Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual‐gate a‐IGZO Thin Film Transistors