Abstract:This study investigates the gate stress-induced mobility discrepancy in p-type single-crystal organic field-effect transistors (OFETs) on an octyltrichlorosilane (OTS)-modified SiO2/Si substrate. During measurements in atmosphere, anti-clockwise hysteresis was observed in the transfer curve, and the mobility calculated from the forward sweep was smaller than that calculated from the reverse sweep. Hysteresis has often been observed for OFETs but the mobility discrepancy has not been clearly understood. We formulated a "fast trapping vs. slow detrapping" model and suggested that the mobility values calculated from the reverse sweep represent the intrinsic property of the material. To verify the validity of this model, we investigated mobility anisotropy of an air-stable organic semiconductor, 2,7-bis(4-methoxyphenyl) benzo[b] benzo[4,5] thieno[2,3-d] thiophene (DBOP-BTBT). By measuring the single-crystal OFET characteristics of many crystals with different orientations, we observed anisotropic hole mobility calculated from the reverse sweep. The mobility along the b-axis, which corresponds to the p-p stacking direction, was 13.9 cm(2) V-1 s(-1), and that along the a-axis was 6.2 cm(2) V-1 s(-1). However, we did not see clear anisotropy when mobility was calculated from the forward sweep due to a variation in the data. The threshold voltage from the reverse and the forward sweeps showed isotropic characteristics within the range from -60 to -70 V and from -50 to -60 V, respectively. These results indicate that the numbers of filled traps were different between the reverse and the forward sweeps at the interface, and confirm the validity of our model.

Intrinsic hole mobility and trapping in a regio-regular poly(thiophene)

Excellent Carrier Mobility of 0.24 Cm2/vs in Regioregular Poly(3-Hexylthiophene) Based Field-Effect Transistor by Employing Octadecyltrimethoxysilane Treated Gate Insulator

Short Channel Effects in Regioregular Poly(Thiophene) Thin Film Transistors

High-performance Semiconducting Polythiophenes for Organic Thin-Film Transistors.

Tunability of Mobility and Conductivity over Large Ranges in Poly(3,3'''-Didodecylquaterthiophene)/insulating Polymer Composites.

Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

Controlling the Field-Effect Mobility of Regioregular Polythiophene by Changing the Molecular Weight

Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

Theory of the field-effect mobility in amorphous organic transistors

P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors

Temperature-dependent hole mobility in pyrene–thiophene-based room-temperature discotic liquid crystals

Diketopyrrolopyrrole-Based Π-Conjugated Copolymer Containing Β-Unsubstituted Quintetthiophene Unit: A Promising Material Exhibiting High Hole-Mobility for Organic Thin-Film Transistors

Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

Recent Progress in High-Mobility Organic Transistors: A Reality Check

Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors.

Film-Depth-Dependent Charge Mobilities in Organic Semiconductor Films

Trapping in organic field-effect transistors

Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors

Intrinsic Charge Carrier Mobility in Single-Crystal OFET by “fast Trapping Vs. Slow Detrapping” Model

Transiently delocalized states enhance hole mobility in organic molecular semiconductors