Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors.

Hio-Ieng Un,Peng Cheng,Ting Lei,Chi-Yuan Yang,Jie-Yu Wang,Jian Pei
DOI: https://doi.org/10.1002/adma.201800017
IF: 29.4
2018-01-01
Advanced Materials
Abstract:Organic field-effect transistors (OFETs) with impressively high hole mobilities over 10 cm(2) V-1 s(-1) and electron mobilities over 1 cm(2) V-1 s(-1) have been reported in the past few years. However, significant non-ideal electrical characteristics, e.g., voltage-dependent mobilities, have been widely observed in both small-molecule and polymer systems. This issue makes the accurate evaluation of the electrical performance impossible and also limits the practical applications of OFETs. Here, a semiconductor-unrelated, charge-trapping-induced non-ideality in OFETs is reported, and a revised model for the non-ideal transfer characteristics is provided. The trapping process can be directly observed using scanning Kelvin probe microscopy. It is found that such trapping-induced non-ideality exists in OFETs with different types of charge carriers (p-type or n-type), different types of dielectric materials (inorganic and organic) that contain different functional groups (-OH, -NH2, -COOH, etc.). As fas as it is known, this is the first report for the non-ideal transport behaviors in OFETs caused by semiconductor-independent charge trapping. This work reveals the significant role of dielectric charge trapping in the non-ideal transistor characteristics and also provides guidelines for device engineering toward ideal OFETs.
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