Abstract:AbstractFor newly developed semiconductors, obtaining high‐performance transistors and identifying carrier mobility have been hot and important issues. Here, large‐area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in the drain current and on–off ratio is remarkable in the long‐channel devices (e.g., 40 times in 200 µm long transistors) but becomes much less pronounced in short‐channel devices (e.g., 2 times in 5 µm long transistors), which limits its application to the display industry. Combining gated four‐probe measurements, scanning Kelvin‐probe microscopy, secondary ion mass spectrometry, X‐ray photoelectron spectroscopy, and device simulations, it is revealed that the enhanced apparent mobility up to several tens of times is attributed to the stabilized hydrogens in the middle area forming a degenerated channel area while that near the source‐drain contacts are merely doped, which causes artifact in mobility extraction. The studies demonstrate the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation. Also, this study shows clearly that a thorough analysis is necessary to understand the origin of very high apparent mobilities in thin‐film transistors or field‐effect transistors with advanced semiconductors.

P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors

Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

High Mobility Wide Bandgap Polymer Realized by a Combined Modification Strategy of Processing Solvent and Dielectric Interface

Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors

P‐1.23: High‐Performance Dual‐Gate A‐igzo/a‐izo Thin‐Film Transistors

Intrinsic hole mobility and trapping in a regio-regular poly(thiophene)

High-mobility, Air Stable Bottom-Contact N-Channel Thin Film Transistors Based on N,N′-ditridecyl Perylene Diimide

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

Lateral Energy Band Profile Modulation in Tunnel Field Effect Transistors Based on Gate Structure Engineering

Heteromaterial Gate Tunnel Field Effect Transistor with Lateral Energy Band Profile Modulation

Improving the Mobility of the Amorphous Silicon Tft with the New Stratified Structure by Pecvd

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Photoreflectance study of pseudomorphic high electronic mobility transistor structure

High Hole Mobility Of 1,2-Bis[4 '-(Diphenylamino)Biphenyl-4-Yl]-1,2-Diphenylethene In Field Effect Transistor

A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries