Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path

Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process

Advances in mobility enhancement of ITZO thin-film transistors: a review

Improving the Mobility of the Amorphous Silicon Tft with the New Stratified Structure by Pecvd

Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors

Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer