Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

Improving the Mobility of the Amorphous Silicon Tft with the New Stratified Structure by Pecvd

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Mobility improvement of LTPS thin film transistor using stacked capping layer

Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors

High Electron Mobility in Well Ordered and Lattice-Strained Hydrogenated Nanocrystalline Silicon