Abstract:Charge carrier mobility is one of the important parameters to measure to compare the behavior of different organic transistors. A high carrier mobility is essential for the organic transistors to operate at a high frequency. Recently, there have been discussions on the mobility overestimation due to gate bias dependent Schottky contacts which lead to severe nonlinearities in the current voltage characteristics, i.e., the double-slope feature. In addition, an accurate evaluation of the carrier mobility from the transfer curves requires accurate parameters such as channel dimensions or dielectric capacitance. Many of the organic field-effect transistors (OFETs) reported in the literature employ unpatterned semiconductor active layers or gate/gate dielectrics where the effective channel dimensions significantly deviate from the values defined by the source drain electrodes due to the fringe effect. To reveal the importance of the fringe effect on the mobility evaluation, here we perform a systematic investigation of OFETs with vacuum-deposited active layers in relation to the fringe effect, followed by the same analysis of solution-processed OFETs with tunable crystal morphology. By continuously narrowing down the active layer toward the actual channel region defined by the source drain electrodes, we show that the carrier mobilities are 110% and 60% overestimated in the vacuum-deposited and solution-processed devices, respectively, even with ideal linearity in the transfer curves. Herein, we suggest a model to evaluate the degree of mobility overestimation in these two families of OFETs and provide the guidelines for the design of the device geometry and channel dimensions to minimize mobility overestimation induced by the fringe effect. In our solution-processed OFETs, we conclude that a large channel width to length ratio over 20 is essential to alleviate the fringe current outside the channel, while a channel ratio greater than 40 is needed for the OFETs with vacuum-deposited semiconductor layers.

Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors

Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

Carrier Mobility Enhancement in Ultrathin-Body InGaAs-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Based on Dual-Gate Modulation

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Overestimation of Carrier Mobility in Organic Thin Film Transistors Due to Unaccounted Fringe Currents

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

P‐1.23: High‐Performance Dual‐Gate A‐igzo/a‐izo Thin‐Film Transistors