Abstract:The asymmetrical degradation behaviors of amorphous indium–gallium–zinc oxide thin-film transistors are studied comprehensively under various gate and drain bias stresses. The transfer curve moves to the negative direction after bias stresses are applied, and different types of asymmetrical degradation are observed depending upon the magnitude of the applied gate and drain bias stresses. After the application of gate-to-source (VGS) and drain-to-source (VDS) bias stresses of (VGS = 16 V, VDS = 16 V) and (VGS = 22 V, VDS = 10 V), the forward mode transfer curve exhibits a more negative shift compared to that of the reverse mode, whereas opposite results are observed under the stress condition of (VGS = 10 V, VDS = 25 V). From the two-dimensional simulation results and the separately extracted subgap density of states in the source and drain sides of the thin film transistors before and after the application of various bias stresses, the local high electric field-induced nonuniform generation rate of the subgap states near the conduction band edge is considered to be the dominant mechanism causing the asymmetrical degradation of the devices under various gate and drain bias stresses. The generation of the subgap states is observed at different locations depending upon the magnitude of the applied gate and drain bias stresses.

Non-exponential transients and the evaluation of stress in (disordered) organic thin film transistors

Analysis of Degradation Mechanism in Polycrystalline Silicon Thin-Film Transistors under Dynamic Off-State Stress with Fast Transition Time

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Effect Of Intrinsic Stress From A Nanoscale High-Dielectric Constant Gate Oxide On Strain In A Transistor Channel

Hysteresis Analysis of Graphene Transistor under Repeated Test and Gate Voltage Stress

Mechanism Study of Positive-Bias Stress Stability for Solution Processed Oxide Semiconductor TFT

Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

New Understanding on the Single-Trap Response under NBTI Stress and the Resulted Stochastic Degradation in Nanoscale MOSFETs

Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Bias stress induced threshold voltage instability in solution processed organic thin film transistor

Transient current responses of organic electrochemical transistors: Evaluating ion diffusion, chemical capacitance, and series elements

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

Study on Electrical Parameter to Nano Thin-Film Transistor under GPa-order Stress

The stress-affected carrier injection and transport in organic semiconductor devices

Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors