Abstract:Low-temperature processing of Bi4-xLaxTi3O12 (BLT) thin films was investigated by chemical solution deposition using an excimer UV irradiation, and their ferroelectric properties, crystallinity and microstructure were characterized. BLT thin films were prepared on Pt(200 nm)/TiO2(50 nm)/SiO2/Si substrates by a spin-coating technique from alkoxide precursor solutions. The excimer UV irradiation onto as-deposited BLT thin films was highly effective in removing organic species of the gel films, leading to the decrease of the crystallization temperature and an increase of the crystallinity. The UV-processed BLT films started to crystallize at 550°C and showed a high crystallinity and a high (117) preferred orientation for 600°C-annealed films. BLT thin films prepared at 600°C showed a homogeneous and dense microstructure with grain sizes of 200–300 nm. The excimer UV irradiation onto as-crystallized BLT thin films was also effective in improving the ferroelectric properties of the thin films. Bi3.35La0.75Ti3O12 thin films prepared at 600°C using excimer UV irradiation showed a well-saturated P–E hysteresis loop with a Pr of 9.8 µC/cm2 and Ec of 78 kV/cm. Moreover, the Bi3.35La0.75Ti3O12 thin films exhibited good fatigue endurance up to 1010 switching cycles.

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Structure and Electrical Properties of Bi3.15nd0.85ti3o12 Ferroelectric Thin Films

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