Abstract:Heteroepitaxial [001]-oriented diamond films with considerably increased lateral grain size and strongly improved orientational perfection could be prepared by microwave plasma-assisted chemical vapor deposition using a [001]-textured growth process on Si (001) substrates followed by a [110] step-flow growth process. The diamond films were characterized by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The results indicate that the diamond crystals increase their lateral dimensions at the (001) film surface either by coalescence of grains combined with a termination of the propagation of grain boundaries or by changing the grain boundary plane orientations from preferentially vertical to preferentially parallel directions with respect to the (001) growth faces. In the second case, the grains with relatively large angle deviation from the ideal epitaxial orientation are overgrown by those with relatively small angle deviation. As a result, the degree of orientational perfection of the films improves considerably in comparison to that of films prepared by the established process of [001]-textured growth. The presence of boron in the gas phase was found to strongly enhance the step-flow lateral grain growth. It was possible to achieve deposition of a thin boron-doped diamond film characterized by a full width at half maximum value of the measured tilt angle distribution of only 2.1°.

High Quality Heteroepitaxial Diamond Films On Silicon: Recent Progresses

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Heteroepitaxial Diamond Films on Silicon (001): Interface Structure and Crystallographic Relations Between Film and Substrate

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Diamond Epitaxy On (001)Silicon - An Interface Investigation

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Recent Progress in Hetero-Epitaxial Growth of the Single-Crystal Diamond

Growth of well-adhered and smooth diamond thin films on fused silica substrates

The Coalescence of [001]diamond Grains Heteroepitaxially Grown on (001) Silicon

Bonding Regeneration: the Driving Force of Hetero-Epitaxial Diamond Grain Coalescence on (001) Silicon

High Resolution Transmission Electron Microscopy Study Of The Initial Growth Of Diamond On Silicon

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Growth of Oriented Heteroepitaxial Diamond Films on Si(100) Via Electron Emission in Hot Filament Chemical Vapor Deposition

Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

DEVELOPMENT OF RESEARCHES ON HETEROEPITAXY DIAMOND FILMS

Epitaxial Growth Of High Quality Diamond Film On The Cubic Boron Nitride Surface By Chemical Vapor Deposition

Epitaxial growth of SiC on (100) Diamond