DEVELOPMENT OF RESEARCHES ON HETEROEPITAXY DIAMOND FILMS

Wang Chuan-xin

Abstract:The status in the researches on synthesizing heteroepitaxial diamond thin films on silicon is introduced. Bias enhanced nucleation,action of SiC in film deposition and effect of different parameters on qualities of heteroepitaxial are summarized.Some problems that worth further researches in this field are presented.

Engineering,Materials Science,Physics

What problem does this paper attempt to address?

Heteroepitaxy of diamond semiconductor on iridium: a review

Weihua Wang,Benjian Liu,Leining Zhang,Jiecai Han,Kang Liu,Bing Dai,Jiaqi Zhu

DOI: https://doi.org/10.1080/26941112.2022.2162348

2023-01-06

Functional Diamond

Abstract:As one of the representatives of carbon-based semiconductors, diamond is called the "Mount Everest" of electronic materials. To maximize its properties and realize its industrial applications, the fabrication of wafer-scale high-quality diamonds is critical. To date, heteroepitaxy is considered as a promising method for the growth of diamond wafers with considerable development. In this review, fundamentals of diamond heteroepitaxy is firstly introduced from several perspectives including nucleation thermodynamics and kinetic, nucleation process at the atomic level, as well as the interplay between the epitaxial film and substrate. Second, the bias enhanced nucleation (BEN) method is reviewed, including BEN setup, BEN process window, nucleation phenomenology (mainly on Iridium), nucleation mechanism by ion bombardment, and large-scale nucleation realization. Third, the following textured growth process is presented, as well as grain boundary annihilation, and dislocation and stress reduction technologies. Fourth, the applications of diamonds in electronic devices are studied, showing its excellent performances in the future power and electronic devices. Finally, prospects in this field are proposed from several aspects.
Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

J YANG,ZD LIN,LX WANG,S JIN,Z ZHANG

DOI: https://doi.org/10.1088/0022-3727/28/6/018

1995-01-01

Journal of Physics D Applied Physics

Abstract:Diamond films were synthesized by the hot-filament chemical vapour deposition (HFCVD) method on Si(100) substrates with surface biasing pre-treatment. Evidence has been obtained from high-resolution cross sectional electron microscopy (HREM) that the diamond films grown on Si wafers showed localized epitaxy. There is an angle of approximately 7.3 degrees between Si(100) and D(100) hetero-epitaxial crystalline planes. The same type of twins (coherent twin boundaries of type, Sigma = 3) exists on and near the interface. It is shown that the pre-treatment of the substrate is a key factor for the localized hetero-epitaxy of diamond films on Si wafers.
Comparison of heteroepitaxial diamond nucleation and growth on roughened and flat Ir/SrTiO 3 substrates

Weihua Wang,Kang Liu,Shilin Yang,Victor Ralchenko,Jiecai Han,Bing Dai,Jiaqi Zhu

DOI: https://doi.org/10.1016/j.vacuum.2022.111374

IF: 4

2022-08-14

Vacuum

Abstract:Heteroepitaxial diamond deposition on iridium substrates allows production of single crystal diamond layers on large area that is difficult to achieve with homoepitaxy. Critically important is the first stage of the process when diamond nucleates on Ir upon biasing (a voltage applied to the substrate). Here, we compared the heteroepitaxial nucleation and successive growth of diamond thin films in a microwave plasma CVD reactor on Ir/SrTiO 3 substrates with different surfaces modified by bias voltage. The roughened surface consists of furrows and ridges while the flat surface is a little wrinkled. The film morphology, crystal quality and stress are characterized with SEM, AFM, TEM, X-ray diffraction and Raman spectroscopy. It is found that the film on the roughened Ir surface has a lower roughness, smaller mosaic spread, but a larger residual stress than the film deposited on the flat Ir surface, which mainly originates from the difference in the domain density. By comparing diamond (111) lattice spacings of different positions from the Ir-diamond interface, it is inferred that diamond nucleation could occur at the furrows and then overgrow the ridges for Ir-roughened sample while diamond may nucleate at the wrinkle and flat regions for Ir-flat sample. These finding are helpful in understanding of details of diamond film heteroepitaxy, and in searching the ways to improve their crystallinity.

materials science, multidisciplinary,physics, applied
A nucleation site and mechanism leading to epitaxial growth of diamond films

ST Lee,HY Peng,XT Zhou,N Wang,CS Lee,I Bello I,Y Lifshitz

DOI: https://doi.org/10.1126/science.287.5450.104

IF: 56.9

2000-01-07

Science

Abstract:A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor deposition (CVD) is identified in high-resolution transmission electron microscopic images. Other sites in the same sample leading to polycrystalline growth, but deleterious to epitaxial CVD growth, are also described. A mechanism for the heteroepitaxial growth of diamond is suggested, in which etching of the nondiamond carbon binder exposes and removes nonadherent nanodiamond nuclei, leaving intact only those directly nucleated on the silicon substrate. This work enhances our understanding of diamond nucleation and heteroepitaxial growth and its potential applications.
Heteroepitaxial Diamond Growth from the Gas Phase: Problems and Prospects (Review)

S. A. Linnik

DOI: https://doi.org/10.1134/S0020441221010280

2021-04-17

Instruments and Experimental Techniques

Abstract:The current state of research and new approaches to solving the problem of heteroepitaxy of diamond films from the gas phase are considered. The features of diamond growth from the gas phase, the nucleation processes, texturing, and the main fundamental problems and barriers of heteroepitaxy of single-crystal diamond are described. Recent achievements and potentially promising approaches in this area are considered.

engineering, multidisciplinary,instruments & instrumentation
Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

QJ Gao,LP You,XH Pan,F Zhang,XF Peng,ZD Lin

DOI: https://doi.org/10.1088/0256-307x/14/2/019

1997-01-01

Chinese Physics Letters

Abstract:Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament. The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy. We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model. The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60° type interface dislocation also supports this model.
Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

H. Kawarada,T. Suesada,H. Nagasawa

DOI: https://doi.org/10.1063/1.114020

IF: 4

1995-01-30

Applied Physics Letters

Abstract:Smooth and continuous diamond films have been heteroepitaxially grown on β-type silicon carbide (β-SiC) (001) surfaces. The smooth films can be obtained in the thickness of less than 6 μm which is the smallest in heteroepitaxial diamonds. The epitaxial growth is composed of three steps; (i) Bias enhanced nucleation on β-SiC (001) grown on silicon (001), (ii) 〈001〉 fast growth mode for the selection of epitaxially oriented particles, and (iii) 〈111〉 fast growth mode for the smoothing of (001) surface. High quality silicon carbide (001) surface is effective for oriented diamond nucleation. The winnowing process of oriented particles and the surface adjustment are due to the high surface energy of diamond.

physics, applied
Approach of selective nucleation and epitaxy of diamond films on Si(100)

X. Jiang,E. Boettger,M. Paul,C.‐P. Klages

DOI: https://doi.org/10.1063/1.112030

IF: 4

1994-09-19

Applied Physics Letters

Abstract:Heteroepitaxial diamond films were selectively nucleated and grown on mirror-polished single crystalline (100) silicon by microwave plasma assisted chemical vapor deposition (MWCVD). The silicon substrates were coated by 0.5 μm thick SiO2 films patterned by a standard photolithography process. The selective nucleation was performed under a negative substrate bias condition. Results show that fine patterns of (100) oriented diamond films can be obtained with high deposition selectivity and fine-line definition. In spite of the relatively large crystal size a structure edge roughness of <0.3 μm was achieved.

physics, applied
Interface Modulation for the Heterointegration of Diamond on Si

Xing Li,Li Wan,Chaonan Lin,Wen-Tao Huang,Jing Zhou,Jie Zhu,Xun Yang,Xigui Yang,Zhenfeng Zhang,Yandi Zhu,Xiaoyan Ren,Ziliang Jin,Lin Dong,Shaobo Cheng,Shunfang Li,Chongxin Shan

DOI: https://doi.org/10.1002/advs.202309126

Abstract:Along with the increasing integration density and decreased feature size of current semiconductor technology, heterointegration of the Si-based devices with diamond has acted as a promising strategy to relieve the existing heat dissipation problem. As one of the heterointegration methods, the microwave plasma chemical vapor deposition (MPCVD) method is utilized to synthesize large-scale diamond films on a Si substrate, while distinct structures appear at the Si-diamond interface. Investigation of the formation mechanisms and modulation strategies of the interface is crucial to optimize the heat dissipation behaviors. By taking advantage of electron microscopy, the formation of the epitaxial β-SiC interlayer is found to be caused by the interaction between the anisotropically sputtered Si and the deposited amorphous carbon. Compared with the randomly oriented β-SiC interlayer, larger diamond grain sizes can be obtained on the epitaxial β-SiC interlayer under the same synthesis condition. Moreover, due to the competitive interfacial reactions, the epitaxial β-SiC interlayer thickness can be reduced by increasing the CH4/H2 ratio (from 3% to 10%), while further increase in the ratio (to 20%) can lead to the broken of the epitaxial relationship. The above findings are expected to provide interfacial design strategies for multiple large-scale diamond applications.
Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Ting Liang,Jianjun Tang,Jijun Xiong,Yong Wang,Chenyang Xue,Xujun Yang,Wendong Zhang

DOI: https://doi.org/10.1016/j.vacuum.2010.01.054

2011-01-01

Abstract:Hexagonal-GaN heteroepitaxy layers have been grown on Si(111)substrate by MOCVD.The structure,morphology and optical properties of GaN epilayer is analyzed and characterized by various analysis method such as optical microscope,AFM,SEM,X-ray diffraction(XRD),and Raman spectra,etc.Test results show that the crystal reveals the wurtzite structure with the(0002)crystal orientation and the heteroepitaxial growth of GaN has good single crystal quality,good directing property,smooth surface without crack.The Raman peaks of E2(high)and A1(LO)phonon mode have red shift according to relaxed GaN,which might be related to the tensile stress in GaN layer.But the AO phonon mode of Si have blue shift as its eigen frequency which shows the Si substrate suffered compressive stress.
Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis

Taro Yoshikawa,David Herrling,Frank Meyer,Frank Burmeister,Christoph E. Nebel,Oliver Ambacher,Vadim Lebedev

DOI: https://doi.org/10.1116/1.5086020

2019-03-01

Abstract:A simple and effective method to extend the area of bias enhanced nucleation (BEN) for heteroepitaxial diamond growth is introduced. Two-inch substrates are placed on a flat and smooth surface of approximately 3-in. Mo substrate holder and then treated via BEN with or without metal-covered Si plates located right outside of the substrates. It is clarified that not only the plates themselves but also their thickness has a great impact on the BEN area, or in other words, the homogeneity of nucleation density on the substrates. As a result, the epitaxial diamond nucleation is successfully performed on nearly the whole area of a 2-in. Ir/YSZ/Si(001) substrate using the 1 mm thick half-ring plates. For a proof of this concept, finite element method simulations are also performed to investigate the influence of such plates on plasma (electron) density distributions above the substrates. Throughout this study, the significance of substrate holder configurations for the widely accessible wafer-scale diamond heteroepitaxy is revealed.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

F. Stubhan,M. Ferguson,H.-J. Füsser,R. J. Behm,H.‐J. Füsser

DOI: https://doi.org/10.1063/1.113315

IF: 4

1995-04-10

Applied Physics Letters

Abstract:Heteroepitaxial nucleation of diamond on mirror-polished Si(001) substrates was achieved in a conventional hot filament reactor. The key to this achievement was the development of a bias-enhanced nucleation process step analogous to the procedure for heteroepitaxial nucleation in microwave plasma chemical vapor deposition. The nucleation and subsequent growth of diamond were characterized by means of scanning electron microscopy, scanning tunneling microscopy, and Raman spectroscopy. Well-developed diamond (001) crystal faces are observed even for very thin (∼0.3 μm) diamond films. High-resolution scanning electron microscopy investigations of the early stage of growth revealed oriented crystallites on the substrate surface with a nucleation density of 109 cm−2.

physics, applied
Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

X. Jiang,K. Schiffmann,C.-P. Klages,D. Wittorf,C. L. Jia,K. Urban,W. Jäger

DOI: https://doi.org/10.1063/1.367012

IF: 2.877

1998-03-01

Journal of Applied Physics

Abstract:Heteroepitaxial [001]-oriented diamond films with considerably increased lateral grain size and strongly improved orientational perfection could be prepared by microwave plasma-assisted chemical vapor deposition using a [001]-textured growth process on Si (001) substrates followed by a [110] step-flow growth process. The diamond films were characterized by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The results indicate that the diamond crystals increase their lateral dimensions at the (001) film surface either by coalescence of grains combined with a termination of the propagation of grain boundaries or by changing the grain boundary plane orientations from preferentially vertical to preferentially parallel directions with respect to the (001) growth faces. In the second case, the grains with relatively large angle deviation from the ideal epitaxial orientation are overgrown by those with relatively small angle deviation. As a result, the degree of orientational perfection of the films improves considerably in comparison to that of films prepared by the established process of [001]-textured growth. The presence of boron in the gas phase was found to strongly enhance the step-flow lateral grain growth. It was possible to achieve deposition of a thin boron-doped diamond film characterized by a full width at half maximum value of the measured tilt angle distribution of only 2.1°.

physics, applied
Bias process for heteroepitaxial diamond nucleation on Ir substrates

Weihua Wang,Shilin Yang,Benjian Liu,Xiaobin Hao,Jiecai Han,Bing Dai,Jiaqi Zhu

DOI: https://doi.org/10.1007/s42823-022-00441-8

2022-12-09

Carbon letters

Abstract:Heteroepitaxy is a better method of enlarging SCD wafer size than homoepitaxy. In this work, several aspects of the bias process for heteroepitaxial diamond nucleation are studied experimentally. First, with increasing bias time, the diamond-nucleation pathway is found to transform from “isolated-crystal nucleation” to “typical domain-nucleation” and back to “isolated-crystal nucleation.” An interdependent relationship between bias voltage and bias time is proposed: the higher the bias voltage, the shorter the bias time. Second, a correlation exists between the threshold bias voltage and reactor-chamber pressure: a higher reactor chamber pressure usually requires a higher threshold bias voltage to realize “typical domain nucleation.” Third, diamond bias-enhanced nucleation and growth is observed at a high CH4 content, where the dynamic equilibrium between amorphous-carbon-layer deposition and atomic-hydrogen etching is broken. Finally, epitaxial nucleation is obtained on a substrate with ∅30 mm in a home-made MPCVD setup.

materials science, multidisciplinary,chemistry
Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

D.J. Qiu,A.M. Feng,H.Z. Wu

DOI: https://doi.org/10.1016/j.diamond.2003.11.086

IF: 3.806

2004-01-01

Diamond and Related Materials

Abstract:Nanostructured diamond films (NDFs) were grown on fine-polished Si(001) substrates by radio-frequency plasma-enhanced hot-filament chemical vapor deposition at low gas pressure of approximately 2 Torr. High resolution field-emission scanning electron microscopy (FESEM), X-ray diffraction and Raman scattering spectroscopy were employed to characterize the NDFs. FESEM measurement indicated that diamond nuclei density exceeded 1010 cm−2 after growth for 20 min, which should render potential applications, such as in the fabrication of diamond-related field-emission devices. Photoluminescence excitation characterizations revealed the sharp optical absorption band edge of NDFs, and the band gap is 5.34 eV.
Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates

Ruozheng Wang,Fang Lin,Qiang Wei,Gang Niu,Hong-Xing Wang

DOI: https://doi.org/10.3390/ma15020624

IF: 3.4

2022-01-14

Materials

Abstract:This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 μm on Ir (001)/Al2O3 substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesces to closed films. The films’ strain imposed by the substrate gradually relaxed as the film thickness increased. It was found that defects are mainly located at the diamond/Ir interface and are then mainly propagated along the [001] direction from the nucleation region. Etching pits along the [001] direction formed by H2/O2 plasma treatment were used to show defect distribution at the diamond/Ir/Al2O3 interface and in the diamond bulk, which revealed the reduction of etching pit density in diamond thick-film surface. These results show the evident impact of the thickness on the heteroepitaxially grown diamond films, which is of importance for various device applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

QJ Chen,LX Wang,Z Zhang,J Yang,ZD Lin

DOI: https://doi.org/10.1063/1.116451

IF: 4

1996-01-01

Applied Physics Letters

Abstract:Expitaxially oriented growth of diamond film on Si(001) was achieved using hot filament chemical vapor deposition. The epitaxial relationship between the film and the substrate was confirmed by the observation through scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) as follows: Dia(001)//Si(001) and Dia〈110〉//Si〈110〉 with a misorientation angle of 9° between Dia(001) and Si(001). This reports the HRTEM observation of the largest area of the diamond/Si interface (larger than 880 Å). It demonstrates that the intermediate β-SiC layer is unnecessary for achieving diamond epitaxy on Si. Discussion reveals that the value of the misorientation angle between Dia(001) and Si(001) is not unique and should be controlled to deposit single-crystal diamond films on Si.
45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition

Qijin Chen

DOI: https://doi.org/10.48550/arXiv.cond-mat/9708124

1997-08-18

Abstract:45-degree rotated epitaxial diamond nucleation on both (001) and {111} planes of a silicon substrate was observed using chemical vapor deposition with nucleation enhancement by electron emission. The epitaxial relationship between diamond and Si is D(001)//Si(001) and D<100>//Si<110> in both cases. While the case of diamond nucleation on Si(001) may be explained in Verwoerd's model, the other case has no theoretical model as yet. The as-grown diamond was characterized by scanning electron microscopy and Raman spectroscopy. It is speculated that a suitable combination of low temperature and low CH_4 concentration leading to low nucleation rate favors the 45-degree rotated epitaxy over those in parallel registry. This observation sheds light on the mechanism of epitaxy of diamond on Si substrates, and has great significance in parameter control in achieving single-crystal epitaxial diamond films.

Materials Science
Coalescence as a key process in wafer-scale diamond heteroepitaxy

Vadim Lebedev,Jan Kustermann,Jan Engels,Jürgen Weippert,Volker Cimalla,Peter Knittel,Lutz Kirste,Christian Giese,Patricia Quellmalz,Andreas Graff,Jan Jeske

DOI: https://doi.org/10.1063/5.0189631

IF: 2.877

2024-04-09

Journal of Applied Physics

Abstract:Due to fascinating physical properties powered by remarkable progress in chemical vapor deposition of high-quality epilayers, diamond thin films attract great attention for fabrication of nitrogen-vacancy-based solid-state spin systems capable of operating in ambient conditions. To date, diamond heteroepitaxy via bias-enhanced nucleation is an unavoidable method for reliable wafer-scale film manufacturing. In this work, we analyze the coalescence phenomena in nitrogen doped, heteroepitaxial diamond epilayers, with a particular focus on their specific role in the annihilation of macroscopic crystal irregularities such as grain boundaries, non-oriented grains, and twinned segments. Here, we also report on the growth mechanism for the “primary” crystal orientation along with a predominant formation of two different types of boundaries highlighting the {011}-type as a main source of the crystal lattice irregularities.

physics, applied
Nucleation of diamond films on heterogeneous substrates: a review

Soumen Mandal

DOI: https://doi.org/10.1039/d1ra00397f

IF: 4.036

2021-01-01

RSC Advances

Abstract:Growth of diamond film on heterogeneous substrates assisted by nucleation/seeding.

chemistry, multidisciplinary

DEVELOPMENT OF RESEARCHES ON HETEROEPITAXY DIAMOND FILMS

Heteroepitaxy of diamond semiconductor on iridium: a review

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Comparison of heteroepitaxial diamond nucleation and growth on roughened and flat Ir/SrTiO 3 substrates

A nucleation site and mechanism leading to epitaxial growth of diamond films

Heteroepitaxial Diamond Growth from the Gas Phase: Problems and Prospects (Review)

Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Interface Modulation for the Heterointegration of Diamond on Si

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Bias process for heteroepitaxial diamond nucleation on Ir substrates

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition

Coalescence as a key process in wafer-scale diamond heteroepitaxy

Nucleation of diamond films on heterogeneous substrates: a review