Abstract:Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO 2 as the gate oxygen layer with a high-k material (ZrO 2 ) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO 2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO 2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrO x components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO 2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 10 12 eV -1 cm -2 . The movable charge Neffof the oxide layer was also controlled at 10 12 cm -2 . Therefore, the overall performance of the ZrO 2 /SiC structure in terms of electrical properties exceeds that of the ZrO 2 /Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO 2 ) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

A Study on the Corrosion Resistance Properties of SiC/ZGO Films to ZGO Film

Preparation and Properties of GO-SiO2 Anticorrosive Coatings

Effect of sealing treatment on corrosion behavior of plasma sprayed ZrO2 coated Cf/Mg composites

Corrosion resistance of nonstoichiometric gadolinium zirconate coatings against CaO-MgO-Al2O3-SiO2 silicate

Effect of silicon/graphite ratio and temperature on oxidation protective properties of SiC/ZrB2–SiC coatings prepared by pack cementation

Effect of temperature-dependent nano SiC on the ablation resistance of ZrC coating

Structure and corrosion resistance of SiC thin film coated on NdFeB by magnetron sputtering

Corrosion of SiC layers on coated zirconia particles in wet atmosphere

Corrosion resistance of BN–ZrO2 ceramics with different additives by molten steel

Effect of Lu2O3 addition on the oxidation behavior of SiC-ZrB2 composite coating at 1500 °C: Experimental and theoretical study

Effect of deposition temperature on the corrosion behavior of CVD SiC coatings on SiCf/SiC composites under simulated PWR conditions

Effects of SiC on microstructure and properties of plasma sprayed ZrB2–ZrC composite coating

Electronic Properties of ZrO2 Films Fabricated via Atomic Layer Deposition on 4H-SiC and Si Substrates

Influence of radio frequency magnetron sputtering parameters on the structure and performance of SiC films

Effect of the Y2O3 amount on the oxidation behavior of ZrB2-SiC-based coatings for carbon/carbon composites

Effect of Si on the structure and oxidation behavior of Cr-Si coatings on Zry-4 under high temperature steam environment

Study on the High Speed Chemical Vapor Deposition for SiC Coating

Corrosion and Tribological Behavior of ZrO2 Films Prepared on Stainless Steel Surface by the Sol-Gel Method

The corrosion behavior of CVD SiC coatings on SiCf/SiC composites in a simulated molten salt reactors environment

Deposition voltages on the phase evolutions, microstructures, and oxidation behaviors of thermal-resistance Glass-MoSi2-SiC coating

Effect of boronizing treatment on the oxidation resistance of Zr2(AlSi)4C5/SiC composite