Room Temperature Deposition of Titanium Carbide Thin Films Using Dense Plasma Focus Device

RS Rawat,G Macharaga,P Lee,S Xu,S Lee
DOI: https://doi.org/10.1016/s0257-8972(00)01094-x
2003-01-01
AIP Conference Proceedings
Abstract:Thin films of titanium carbide (TiC) were deposited on 304-stainless steel substrates using a dense plasma focus device. The conventional hollow copper anode of the 3.3 kJ Mather type plasma focus device was replaced by solid titanium anode for deposition of TiC thin films. The argon–acetylene admixture (in 7:3 ratio) was used as the filling gas at a pressure of 1.5 mbar. Substrates were placed along the anode axis at a distance of 11.5 cm from the top of the anode. Thin films of TiC were deposited using different numbers of focus shots, like 10, 20 and 30, at room temperature substrates. Deposited films were analyzed for their structure, surface morphology, surface profile, elemental composition and distribution using X-ray diffraction (XRD), scanning electron microscopy (SEM), surface profiling and energy dispersive X-ray spectroscopy (EDX). XRD patterns in all three cases are found to have diffraction peaks for (111), (200), (220), (311) and (222) TiC crystalline planes. Scanning electron micrographs show a smooth film surface with increasing clustering of TiC grains with the increase in number of focus deposition shots. EDX spectra confirm the presence of expected constituent elements with the gradual increase in TiKα peak (of the TiC thin film) relative to FeKα peak (of the substrate) with increasing numbers of focus deposition shots due to increasing film thickness. EDX mapping reveals a uniform distribution of TiC over the substrate surface. These results confirm the first ever deposition of TiC thin films using a dense plasma focus device.
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