Abstract:The injection and transporting characteristics of an Al/metal fluoride (or Alq(3): Cs2CO3)/Alq(3)/Al electron-only device are determined by the dark injection space-charge-limited current (DI-SCLC)method. The deviation from the ratio of peak current density J(DI) to the steadystate current density J(SS) for the ideal ohmic contact, which should be 1.21, was obtained to compare the effects of modifications by four metal fluoride films and Alq(3) doped with Cs2CO3 on the injection of electrons. The value of J(DI)/J(SS), 1.29, for the device modified by 0.5 nm LiF approaches the ideal value of 1.21, confirming the formation of quasic-ohmic contact between the organic layer and cathode, although the deviation increases significantly with the thickening of the film. The value of J(DI)/J(SS) for the device modified by NaF remains stable within 1.6 in a wide NaF film thickness range of 0-2 nm. The minimum value of J(DI)/J(SS), for Alq(3): Cs2CO3 doped film is 1.24, which means that the theoretical ohmic contact between the organic layer and cathode is formed. These characterization results are consistent with the observations in steady-state current-voltage(J-V) experiments. The great electron injection enhancements in the devices pave the way for an application of the cathodic injection in the preparation of OLEDs which are confirmed by doping Alq(3) with Cs2CO3.

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